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MMBD4148

Description
0.15 A, 75 V, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size450KB,2 Pages
ManufacturerDIOTECH
Websitehttp://www.kdiode.com/
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MMBD4148 Overview

0.15 A, 75 V, SILICON, SIGNAL DIODE

MMBD4148 Parametric

Parameter NameAttribute value
Number of terminals3
Number of components1
Processing package descriptionPLASTIC PACKAGE-3
stateDISCONTINUED
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
terminal coatingtin lead
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
structuresingle
Diode component materialssilicon
Maximum power consumption limit0.3500 W
Diode typeSignal diode
Maximum reverse recovery time0.0040 us
Maximum repetitive peak reverse voltage75 V
Maximum average forward current0.1500 A
MMBD4148
SURFACE MOUNT FAST SWITCHING DIODE
Features
SOT-23
Dim
A
L
Top View
3
High Conductance
Fast Switching Speed
Surface Mount Package Ideally Suited for
Automatic Insertion
For General Purpose Switching Application
Plastic Material – UL Recognition Flammability
Classification 94V-O
Min
2.800
1.200
0.890
0.370
1.780
0.013
0.085
0.450
0.890
2.100
0.450
Max
3.040
1.400
1.110
0.500
2.040
0.100
0.177
0.600
1.020
2.500
0.600
A
B
C
2
B S
1
D
G
H
J
K
J
V
G
C
D
H
K
L
S
V
Mechanical Data
Case: SOT-23, Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: See Diagram
Weight: 0.008 grams (approx.)
Mounting Position: Any
@T
A
=25°C unless otherwise specified
Symbol
V
RM
V
RRM
V
RWM
V
R
I
F
I
O
@ t < 1.0µs
I
FSM
P
d
R
JA
All Dimension in mm
3
1
2
Marking : A2
Maximum Ratings
Characteristic
Non-Repetitive Peak Reverse Voltage
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Forward Continuous Current (Note 1)
Average Rectified Output Current (Note 1)
Peak Forward Surge Current (Note 1)
Power Dissipation (Note 1)
Typical Thermal Resistance, Junction to Ambient Air (Note 1)
Operating and Storage Temperature Range
Value
100
75
300
200
2.0
350
357
-65 to +150
Unit
V
V
mA
mA
A
mW
°C/W
°C
T
j
, T
STG
Electrical Characteristics
Characteristic
Reverse Breakdown Voltage (Note 2)
Forward Voltage (Note 2)
@ T
A
= 25 C unless otherwise specified
Symbol
V
(BR)R
V
FM
Min
75
0.715
0.855
1.0
1.25
1.0
50
30
25
2.0
4.0
Max
Unit
V
V
A
A
A
nA
pF
ns
I
F
=
I
F
=
I
F
=
I
F
=
V
R
V
R
V
R
V
R
V
R
Test Condition
I
R
= 100 A
1.0mA
10mA
50mA
150mA
75V
75V, T
j
= 150 C
25V, T
j
= 150 C
20V
0, f = 1.0MHz
Leakage Current (Note 2)
Total Capacitance
Reverse Recovery Time
Notes:
I
RM
C
T
t
rr
=
=
=
=
=
I
F
= I
R
= 10mA,
I
rr
= 0.1 x I
R
, R
L
= 100
1. Device mounted on glass epoxy PCB 1.6” x 1.6” x0.06”; mounting pad for the cathode lead min.. 0.93in
2. Short duration test pulse used to minimize self-heating effect.
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