GOB512UV6432A-80Q-S datasheet, PDF

EEWORLDEEWORLD

Datasheet

Datasheet> All Categories > storage> storage> GOB512UV6432A-80Q-S

GOB512UV6432A-80Q-S: DescriptionSynchronous DRAM Module, 512KX64, 7ns, CMOS, PDMA144,; Categorystorage storage; File Size260KB，13 Pages; ManufacturerFUJITSU; Websitehttp://edevice.fujitsu.com/fmd/en/index.html

Download Datasheet Parametric Compare View All

GOB512UV6432A-80Q-S Overview

Synchronous DRAM Module, 512KX64, 7ns, CMOS, PDMA144,

GOB512UV6432A-80Q-S Parametric

Parameter Name	Attribute value
Maker	FUJITSU
package instruction	DIMM, DIMM144,32
Reach Compliance Code	compliant
Maximum access time	7 ns
Maximum clock frequency (fCLK)	125 MHz
I/O type	COMMON
JESD-30 code	R-PDMA-N144
memory density	33554432 bit
Memory IC Type	SYNCHRONOUS DRAM MODULE
memory width	64
Number of terminals	144
word count	524288 words
character code	512000
Maximum operating temperature	70 °C
Minimum operating temperature
organize	512KX64
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	DIMM
Encapsulate equivalent code	DIMM144,32
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
power supply	3.3 V
Certification status	Not Qualified
refresh cycle	2048
Maximum standby current	0.006 A
Maximum slew rate	0.68 mA
Nominal supply voltage (Vsup)	3.3 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	NO LEAD
Terminal pitch	0.8 mm
Terminal location	DUAL

GOB512UV6432A-80Q-S Related Products

	GOB512UV6432A-80Q-S	GOB512UV6432B-60Q-S	GOB512UV6432A-10Q-S	GOB512UV6432A-60Q-S	GOB512UV6432A-70Q-S	GOB512UV6432B-10Q-S	GOB512UV6432B-70Q-S	GOB512UV6432B-80Q-S
Description	Synchronous DRAM Module, 512KX64, 7ns, CMOS, PDMA144,	Synchronous DRAM Module, 512KX64, 5.5ns, CMOS, PDMA144,	Synchronous DRAM Module, 512KX64, 7ns, CMOS, PDMA144,	Synchronous DRAM Module, 512KX64, 5.5ns, CMOS, PDMA144,	Synchronous DRAM Module, 512KX64, 6ns, CMOS, PDMA144,	Synchronous DRAM Module, 512KX64, 7ns, CMOS, PDMA144,	Synchronous DRAM Module, 512KX64, 6ns, CMOS, PDMA144,	Synchronous DRAM Module, 512KX64, 7ns, CMOS, PDMA144,
Maker	FUJITSU	FUJITSU	FUJITSU	FUJITSU	FUJITSU	FUJITSU	FUJITSU	FUJITSU
package instruction	DIMM, DIMM144,32	DIMM, DIMM144,32	DIMM, DIMM144,32	DIMM, DIMM144,32	DIMM, DIMM144,32	DIMM, DIMM144,32	DIMM, DIMM144,32	DIMM, DIMM144,32
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant	compliant	compliant
Maximum access time	7 ns	5.5 ns	7 ns	5.5 ns	6 ns	7 ns	6 ns	7 ns
Maximum clock frequency (fCLK)	125 MHz	167 MHz	100 MHz	167 MHz	143 MHz	100 MHz	143 MHz	125 MHz
I/O type	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
JESD-30 code	R-PDMA-N144	R-PDMA-N144	R-PDMA-N144	R-PDMA-N144	R-PDMA-N144	R-PDMA-N144	R-PDMA-N144	R-PDMA-N144
memory density	33554432 bit	33554432 bit	33554432 bit	33554432 bit	33554432 bit	33554432 bit	33554432 bit	33554432 bit
Memory IC Type	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE	SYNCHRONOUS DRAM MODULE
memory width	64	64	64	64	64	64	64	64
Number of terminals	144	144	144	144	144	144	144	144
word count	524288 words	524288 words	524288 words	524288 words	524288 words	524288 words	524288 words	524288 words
character code	512000	512000	512000	512000	512000	512000	512000	512000
Maximum operating temperature	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C
organize	512KX64	512KX64	512KX64	512KX64	512KX64	512KX64	512KX64	512KX64
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM
Encapsulate equivalent code	DIMM144,32	DIMM144,32	DIMM144,32	DIMM144,32	DIMM144,32	DIMM144,32	DIMM144,32	DIMM144,32
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY
power supply	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
refresh cycle	2048	2048	2048	2048	2048	2048	2048	2048
Maximum standby current	0.006 A	0.006 A	0.006 A	0.006 A	0.006 A	0.006 A	0.006 A	0.006 A
Maximum slew rate	0.68 mA	0.9 mA	0.56 mA	0.9 mA	0.76 mA	0.56 mA	0.76 mA	0.68 mA
Nominal supply voltage (Vsup)	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
surface mount	NO	NO	NO	NO	NO	NO	NO	NO
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal form	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD
Terminal pitch	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL

Recommended Resources

Clamp amplifier AD8037PIN diode driver circuit diagram

temperature control

ECL to VMOS interface circuit

75Ω coaxial cable drive circuit

555 digital capacitance tester circuit

Driver consisting of integrated circuit TLP250

Shortcut: A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ

Popular Components