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MASMBJP6KE15AE3

Description
Trans Voltage Suppressor Diode, 600W, 12.8V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA, PLASTIC, SMBJ, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size561KB,4 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
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MASMBJP6KE15AE3 Overview

Trans Voltage Suppressor Diode, 600W, 12.8V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AA, PLASTIC, SMBJ, 2 PIN

MASMBJP6KE15AE3 Parametric

Parameter NameAttribute value
MakerMicrosemi
package instructionR-PDSO-C2
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum breakdown voltage15.8 V
Minimum breakdown voltage14.3 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 codeDO-214AA
JESD-30 codeR-PDSO-C2
Maximum non-repetitive peak reverse power dissipation600 W
Number of components1
Number of terminals2
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
polarityUNIDIRECTIONAL
Maximum power dissipation1.38 W
Maximum repetitive peak reverse voltage12.8 V
surface mountYES
technologyAVALANCHE
Terminal formC BEND
Terminal locationDUAL

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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