SSM9972GP,S
N-CHANNEL ENHANCEMENT-MODE POWER MOSFET
Low gate-charge
Simple drive requirement
Fast switching
G
D
BV
DSS
R
DS(ON)
I
D
60V
18mΩ
60A
S
Description
The SSM9972GS is in a TO-263 package, which is widely used for
commercial and industrial surface mount applications, and is well suited
for low voltage applications such as DC/DC converters. The through-hole
version, the SSM9972GP in TO-220, is available for low-footprint vertical
mounting. These devices are manufactured with an advanced process,
providing improved on-resistance and switching performance.
G
G D
S
TO-263 (S)
Pb-free lead finish (second-level interconnect)
D
TO-220(P)
S
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@ T
C
=25°C
I
D
@ T
C
=100°C
I
DM
P
D
@ T
C
=25°C
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V
3
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Rating
60
±25
60
38
230
89
0.7
Units
V
V
A
A
A
W
W/°C
T
STG
T
J
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
°C
°C
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Value
1.4
62
Units
°C/W
°C/W
2/16/2005 Rev.1.1
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SSM9972GP,S
Electrical Characteristics @ T
j
=25
o
C (unless otherwise specified)
Symbol
BV
DSS
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Test Conditions
V
GS
=0V, I
D
=250uA
Min.
60
-
-
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
0.06
-
-
-
55
-
-
-
32
8
20
11
58
45
80
280
230
1.7
Max. Units
-
-
18
22
3
-
10
25
±100
51
-
-
-
-
-
-
-
-
-
V
V/°C
mΩ
mΩ
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
∆
BV
DSS
/
∆
Tj
R
DS(ON)
Breakdown Voltage Temperature Coefficient
Reference to 25°C, I
D
=1mA
V
GS
=10V, I
D
=35A
V
GS
=4.5V, I
D
=25A
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
R
g
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (T
j
=25
o
C)
Drain-Source Leakage Current (T
j
=150
o
C)
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=35A
V
DS
=60V, V
GS
=0V
V
DS
=48V ,V
GS
=0V
V
GS
=±25V
I
D
=35A
V
DS
=48V
V
GS
=4.5V
V
DS
=30V
I
D
=35A
R
G
=3.3Ω,V
GS
=10V
R
D
=0.86Ω
V
GS
=0V
V
DS
=25V
f=1.0MHz
f=1.0MHz
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
3170 5070
Source-Drain Diode
Symbol
V
SD
Parameter
Forward On Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
I
S
=35A, V
GS
=0V
I
S
=35A,
V
GS
=0
V
,
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
50
48
Max. Units
1.2
-
-
V
ns
nC
t
rr
Q
rr
Notes:
1.Pulse width limited by max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
2/16/2005 Rev.1.1
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SSM9972GP,S
200
150
10V
7.0V
I
D
, Drain Current (A)
150
10V
7.0V
I
D
, Drain Current (A)
100
5.0V
100
5.0V
4.5V
4.5V
50
50
T
C
=25 C
0
0
2
4
6
8
10
o
V
G
=3.0V
T
C
= 150 C
o
V
G
=3.0V
0
12
14
0
2
4
6
8
10
12
14
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
20
1.6
I
D
= 25 A
T
C
=25 C
18
o
1.4
I
D
=35A
V
G
=10V
Normalized R
DS(ON)
2
4
6
8
10
R
DS(ON)
(mΩ )
1.2
1.0
16
0.8
14
0.6
-50
0
50
100
150
V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature (
o
C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
vs. Junction Temperature
1.7
20
15
Normalized V
GS(th)
(V)
T
j
=150
o
C
I
S
(A)
10
T
j
=25
o
C
1.2
0.7
5
0
0
0.2
0.4
0.6
0.8
1
1.2
0.2
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 5. Forward Characteristic offf
Fig 6. Gate Threshold Voltage vs.
Reverse Diode
Junction Temperature
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SSM9972GP,S
f=1.0MHz
12
10000
I
D
= 35 A
V
GS
, Gate to Source Voltage (V)
10
8
V
DS
=48V
V
DS
=38V
V
DS
=30V
C (pF)
1000
C
iss
6
4
2
C
oss
C
rss
0
0
20
40
60
100
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
1
Normalized Thermal Response (R
thjc
)
Duty factor=0.5
100
0.2
I
D
(A)
100us
1ms
10
0.1
0.1
0.05
P
DM
0.02
10ms
T
C
=25 C
Single Pulse
o
t
T
0.01
100ms
DC
10
100
1000
Single Pulse
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
1
0.1
1
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
100
V
DS
=5V
80
V
G
T
j
=25
o
C
T
j
=150
o
C
I
D
, Drain Current (A)
Q
G
4.5V
60
Q
GS
40
Q
GD
20
Charge
0
0
2
4
6
8
Q
V
GS
, Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
2/16/2005 Rev.1.1
Fig 12. Gate Charge Waveform
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SSM9972GP,S
Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no
guarantee or warranty, express or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no
responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its
use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including
without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to
the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of
Silicon Standard Corporation or any third parties.
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