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SSM04N70BGF-A

Description
N-channel Enhancement-mode Power MOSFET
File Size543KB,5 Pages
ManufacturerSSC
Websitehttp://www.siliconstandard.com/
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SSM04N70BGF-A Overview

N-channel Enhancement-mode Power MOSFET

SSM04N70BGF-A
N-channel Enhancement-mode Power MOSFET
PRODUCT SUMMARY
BV
DSS
R
DS(ON)
I
D
DESCRIPTION
The SSM04N70BGF-A achieves fast switching performance
with low gate charge without a complex drive circuit. It
is suitable for high voltage applications such as AC/DC
converters, SMPS and general off-line switching circuits.
650V
2.4Ω
4A
Pb-free; RoHS-compliant TO-220FM
The SSM04N70BGF-A is in TO-220FM for through-hole
mounting where a small footprint is required on the board,
and/or an external heatsink is to be attached.
G
D
S
These devices are manufactured with an advanced process,
providing improved on-resistance and switching performance.
TO-220FM (suffix I)
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
GS
I
D
I
DM
P
D
E
AS
I
AR
E
AR
Parameter
Drain-source
voltage
Gate-source
voltage
Continuous
drain current, T
C
= 25°C
T
C
= 100°C
Pulsed
drain current
1
Total
power dissipation, T
C
= 25°C
Linear
derating factor
Single
pulse avalanche energy
3
Avalanche current
Repetitive avalanche energy
Value
650
±30
4
2.5
15
33
0.26
100
4
4
Units
V
V
A
A
A
W
W/°C
mJ
A
mJ
T
STG
T
J
Storage
temperature range
Operating
junction temperature range
-55 to 150
-55 to 150
°C
°C
THERMAL
CHARACTERISTICS
Symbol
R
Θ
JC
R
Θ
JA
Parameter
Maximum thermal resistance, junction-case
Maximum thermal resistance, junction-ambient
Value
3.8
65
Units
°C/W
°C/W
Notes:
1. Pulse width must be limited to avoid exceeding the safe operating area.
2. Pulse width <300us, duty cycle <2%.
3. Starting Tj = 25°C, V
DD
=50V , L=25mH , R
G
=25Ω , I
AS
= 4A.
9/12/2006 Rev.3.1
www.SiliconStandard.com
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