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PLAD30KP200AE3

Description
Trans Voltage Suppressor Diode, 30000W, 200V V(RWM), Unidirectional, 1 Element, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-1
CategoryDiscrete semiconductor    diode   
File Size269KB,5 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Environmental Compliance  
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PLAD30KP200AE3 Overview

Trans Voltage Suppressor Diode, 30000W, 200V V(RWM), Unidirectional, 1 Element, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-1

PLAD30KP200AE3 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerMicrosemi
package instructionS-PSSO-G1
Contacts1
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum breakdown voltage245 V
Minimum breakdown voltage222 V
Breakdown voltage nominal value233.5 V
Maximum clamping voltage322 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 codeS-PSSO-G1
JESD-609 codee3
Maximum non-repetitive peak reverse power dissipation30000 W
Number of components1
Number of terminals1
Package body materialPLASTIC/EPOXY
Package shapeSQUARE
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
polarityUNIDIRECTIONAL
Maximum power dissipation2.5 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage200 V
surface mountYES
technologyAVALANCHE
Terminal surfaceMATTE TIN
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperature40
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