EEWORLDEEWORLDEEWORLD

Part Number

Search

MBR760

Description
Rectifier Diode, Schottky, 1 Phase, 1 Element, 7.5A, 60V V(RRM), Silicon, TO-220AC,
CategoryDiscrete semiconductor    diode   
File Size46KB,2 Pages
ManufacturerEIC [EIC discrete Semiconductors]
Environmental Compliance
Download Datasheet Parametric Compare View All

MBR760 Online Shopping

Suppliers Part Number Price MOQ In stock  
MBR760 - - View Buy Now

MBR760 Overview

Rectifier Diode, Schottky, 1 Phase, 1 Element, 7.5A, 60V V(RRM), Silicon, TO-220AC,

MBR760 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerEIC [EIC discrete Semiconductors]
Reach Compliance Codecompliant
Other featuresFREE WHEELING DIODE, LOW POWER LOSS
applicationEFFICIENCY
Shell connectionCATHODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.75 V
JEDEC-95 codeTO-220AC
JESD-30 codeR-PSFM-T2
Maximum non-repetitive peak forward current150 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Maximum output current7.5 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Maximum repetitive peak reverse voltage60 V
Maximum reverse current500 µA
surface mountNO
technologySCHOTTKY
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Certificate TH97/10561QM
Certificate TW00/17276EM
MBR735 ~ MBR760
PRV : 35~60 Volts
Io : 7.5 Amperes
FEATURES :
* Plastic package has Underwriters Laboratory
Flammability Classifications 94V-0
* Metal silicon junction, majority carrier conduction
* Low power loss, high efficiency
* Guardring for overvoltage protection
* For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
* High temperature soldering : 250°C/10 seconds,
0.25" (6.35mm) from case
* Pb / RoHS Free
SCHOTTKY BARRIER
RECTIFIER DIODES
TO-220AC
0.154(3.91)DIA.
0.415(10.54)MAX.
0.148(3.74)
0.113(2.87)
0.103(2.62)
0.635(16.13)
0.625(15.87)
1
PIN 1
CASE
PIN 2
0.205(520)
0.195(4.95)
0.037(0.94)
0.027(0.68)
0.022(0.56)
0.014(0.36)
2
0.160(4.06)
0.140(3.56)
0.560(14.22)
0.530(13.46)
0.055(1.39)
0.045(1.14)
0.185(4.70)
0.175(4.44)
0.145(3.68)
0.135(3.43)
0.350(8.89)
0.330(8.39)
0.603(15.32)
0.573(14.55)
MECHANICAL DATA :
* Case : JEDEC TO-220AC molded plastic body
* Terminals: Plated leads, solderable per
MIL-STD-750 Method 2026
* Polarity: As marked
* Mounting Position: Any
* Weight : 2.24 grams (Approximately)
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RATINGS
Maximum Reptitive Peak Reverse Voltage
Maximum Working Peak Reverse Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current (See Fig. 1)
Peak Forward Surg Current, 8.3 ms single half sine-wave
superimposed on rated load (JEDEC Method)
Maximum Instantaneous Forward Voltage (Note 1)
at I
F
= 7.5 A, T
C
= 25 °C
at I
F
= 7.5 A, T
C
= 125 °C
Maximum Reverse Current at Rate
Peak Reverse Voltage
Typical Thermal Resistance
Operating Junction Temperature Range
Storage Temperature Range
Note :
(1) Pulse test : 300 µs pluse width, 1% duty cycle
( Tc = 25 °C unless otherwise noted)
SYMBOL MBR735 MBR745 MBR750 MBR760 UNIT
V
RRM
V
RWM
V
DC
I
F(AV)
I
FSM
35
35
35
45
45
45
7.5
150
50
50
50
60
60
60
V
V
V
A
A
V
F
T
C
= 25 °C
T
C
= 125 °C
-
0.57
0.75
0.65
0.5
50
3.0
-65 to + 150
-65 to + 175
V
I
R
I
R(H)
R
θJC
T
J
T
STG
0.1
15
mA
°C/W
°C
°C
Page 1 of 2
Rev. 01 : February 22, 2006

MBR760 Related Products

MBR760 MBR745 MBR735 MBR750
Description Rectifier Diode, Schottky, 1 Phase, 1 Element, 7.5A, 60V V(RRM), Silicon, TO-220AC, Rectifier Diode, Rectifier Diode, Rectifier Diode,
Maker EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors]
Reach Compliance Code compliant compliant compliant compli
Is it lead-free? - Lead free Lead free Lead free
Large capacitors filter low frequencies, and small capacitors filter high frequencies?
Without understanding the characteristics of multiple LCR groups connected in series and then in parallel, and without sufficient ability to design multi-order LC filters and multi-stage LC traps, do ...
PowerAnts Analog electronics
【Old Posts】Record Total Posts
First floor for Nong Jie... Just kidding. I have always had obsessive compulsive disorder. For example, when digging graves, I planned to dig them all up one by one from the beginning to the latest. B...
辛昕 Programming Basics
The evolution of mesh networks and IoT devices
Q Tony, what is a mesh network?A A mesh network is a topology where all nodes are connected. It can use a single Internet access gateway to connect to each network node; or let the nodes connect and c...
alan000345 RF/Wirelessly
12VDC power port surge protection tube BV-SMDJ13A
12VDC power port lightning protection test, TEST LEVEL: DM4KV-2KA; If you need to increase the flow rate, you can choose the front stage LT-B3D230L OR LT-BC301N-D;...
szlangtuo Power technology
Question about the number of concurrent services provided by base stations
I saw a document saying:Common misunderstandings and precautions in NB-IoT applications Question to Customer A: I heard that it has a super large capacity and a single base station can allow up to 50,...
一沙一世 RF/Wirelessly
Power chip burnt out
16.8V power input, battery powered, now the 4.4V and 3.3V outputs will occasionally burn out, then the 4.4V will power the MC20 module, the MC20 module will be powered on and off regularly, now I don'...
li6666 Power technology

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号