HGT1S15N120C3 datasheet, PDF - EEWORLD Datasheet

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HGT1S15N120C3: DescriptionInsulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel, TO-262AA; CategoryDiscrete semiconductor The transistor; File Size44KB，2 Pages; ManufacturerHarris; Websitehttp://www.harris.com/

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HGT1S15N120C3 Overview

Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel, TO-262AA

HGT1S15N120C3 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Harris
package instruction	IN-LINE, R-PSIP-T3
Reach Compliance Code	unknown
Shell connection	COLLECTOR
Maximum collector current (IC)	35 A
Collector-emitter maximum voltage	1200 V
Configuration	SINGLE
Maximum landing time (tf)	400 ns
Gate emitter threshold voltage maximum	7.5 V
Gate-emitter maximum voltage	20 V
JEDEC-95 code	TO-262AA
JESD-30 code	R-PSIP-T3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	164 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	MOTOR CONTROL
Transistor component materials	SILICON
Nominal off time (toff)	820 ns
Nominal on time (ton)	42 ns

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TO-251AA (D-PAK)

600V

RUGGED UFS

600V

275ns UFS

HGTD3N60C3S

2.0V

245µJ

600V

200ns UFS

600V

RUGGED UFS

TO-252AA (D-PAK)

S E M I C O N D U C TO R

I

C

AT

110

o

C

600V

275ns UFS

600V

200ns UFS

600V UFS Series IGBTs

V

CE(SAT)

Maximum at T

J

=

I

CE

= I

C110

, and V

GE

= 15V

+25

o

C

E

OFF

Typical at T

J

= +150

o

C

I

CE

= I

C110

, and V

CE(PK)

= 480V

3A

HGTD3N60C3

2.0V

245µJ

HGTD3N60B3

2.0V

200µJ

HGTD7N60C3R

2.3V

TBD

µJ

HGTD7N60C3S

2.0V

600µJ

HGTD3N60C3R

2.3V

TBD

µJ

HGTD7N60B3S

2.0V

350µJ

HGTD7N60C3RS

2.3V

TBD

µJ

HGTD3N60B3S

2.0V

200µJ

HGTD3N60C3RS

2.3V

TBD

µJ

7A

HGTD7N60C3

2.0V

600µJ

HGTD7N60B3

2.0V

350µJ

M

A

TO-262AA (D

2

-PAK)

600V

RUGGED UFS

600V

275ns UFS

HGT1S3N60C3DS

2.0V

245µJ

HGT1S7N60C3DS

2.0V

600µJ

HGT1S12N60C3S

HGT1S12N60C3DS

2.0V

900µJ

600V

200ns UFS

600V

RUGGED UFS

600V

275ns UFS

A

TO-263AB (D

2

-PAK)

TO-220AB

600V

200ns UFS

600V

RUGGED UFS

I

C

AT

110

o

C

600V

275ns UFS

600V

200ns UFS

3A

HGT1S3N60C3D

2.0V

245µJ

HGT1S3N60B3D

2.0V

200µJ

HGT1S7N60C3DR

2.3V

TBD

µJ

HGT1S12N60C3R

HGT1S12N60C3DR

2.3V

TBD

µJ

HGT1S20N60C3R

2.3V

3000µJ

HGT1S3N60C3DR

2.3V

TBD

µJ

HGT1S7N60B3DS

2.0V

350µJ

HGT1S12N60B3S

HGT1S12N60B3DS

2.0V

800µJ

HGT1S20N60B3S

2.0V

1050µJ

HGT1S3N60B3DS

2.0V

200µJ

HGT1S7N60C3DRS

2.3V

TBD

µJ

HGT1S12N60C3RS

HGT1S12N60C3DRS

2.3V

TBD

µJ

HGT1S20N60C3RS

2.3V

3000µJ

HGT1S3N60C3DRS

2.3V

TBD

µJ

HGTP3N60C3D

2.0V

245µJ

HGTP7N60C3

HGTP7N60C3D

2.0V

600µJ

HGTP12N60C3

HGTP12N60C3D

2.0V

900µJ

HGTP3N60B3D

2.0V

200µJ

HGTP7N60B3D

2.0V

350µJ

HGTP12N60B3

HGTP12N60B3D

2.0V

800µJ

HGTP20N60C3

1.8V

1500µJ

HGTP20N60B3

2.0V

1050µJ

HGTP3N60C3DR

2.3V

TBD

µJ

HGTP7N60C3DR

2.3V

TBD

µJ

HGTP12N60C3R

HGTP12N60C3DRS

2.3V

TBD

µJ

HGTP20N60C3R

2.3V

3000µJ

7A

HGT1S7N60C3D

2.0V

600µJ

HGT1S7N60B3D

2.0V

350µJ

12A

HGT1S12N60C3

HGT1S12N60C3D

2.0V

900µJ

HGT1S12N60B3

HGT1S12N60B3D

2.0V

800µJ

HGT1S20N60C3S

1.8V

1500µJ

2-3

TO-264

600V

RUGGED UFS

600V

275ns UFS

600V

200ns UFS

600V

RUGGED UFS

20A

HGT1S20N60C3

1.8V

1500µJ

HGT1S20N60B3

2.0V

1050µJ

PART NOMENCLATURE

HGT - G - 12 - N - 60 - C - 3 - D

HARRIS IGBT

TO-247

I

C

AT

110

o

C

600V

275ns UFS

600V

200ns UFS

12A

HGTG12N60C3D

2.0V

900µJ

HGTG20N60C3R

HGTG20N60C3DR

2.3V

3000µJ

HGTG12N60B3D

2.0V

800µJ

HGTG12N60C3DR

2.3V

TBD

µJ

PACKAGE

D: 3 Lead TO-251/TO-252

1S: 3 Lead TO-262/TO-263

P: 3 Lead TO-220

G: 3 Lead TO-247

1Y: 3 Lead TO-264

CONTINUOUS CURRENT

Rating at T

C

= +110

o

C

POLARITY

N-Channel or P-Channel

OPTIONS

L: Logic Level Gate

D: Integral Reverse Diode

S: Surface Mount

C: Current Sense

V: Voltage Clamping

R: Rugged IGBT

20A

HGTG20N60C3

HGTG20N60C3D

1.8V

1500µJ

HGTG27N60C3R

HGTG27N60C3DR

2.3V

2000µJ

HGTG40N60C3R

2.3V

TBD

µJ

HGTG20N60B3

HGTG20N60B3D

2.0V

1050µJ

1: First Generation

2: Second Generation

3: Third Generation

30A

HGTG30N60C3

HGTG30N60C3D

1.8V

2500µJ

HGTG30N60B3

HGTG30N60B3D

2.2V

1700µJ

40A

HGTG40N60C3

1.6V

3300µJ

HGTG40N60B3

2.0V

2500µJ

HGT1Y40N60C3D HGT1Y40N60B3D HGT1Y40N60C3DR

1.6V

3300µJ

2.0V

2500µJ

2.3V

TBD

µJ

VOLTAGE BREAKDOWN/10

i.e. (60, 120)

MAX FALL TIME AT

T

J

= +150

o

C

A: 100ns

E:

≤1µs

B: 200ns

F:

≤2µs

C: 500ns

G:

≤5µs

D: 750ns

LC96585.1

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