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HFP5N40

Description
400V N-Channel MOSFET
File Size897KB,8 Pages
ManufacturerSEMIHOW
Websitehttp://www.semihow.com/
Download Datasheet View All

HFP5N40 Overview

400V N-Channel MOSFET

HFP5N40
June 2005
BV
DSS
= 400 V
HFP5N40
400V N-Channel MOSFET
FEATURES
Originative New Design
Superior Avalanche Rugged Technology
Robust Gate Oxide Technology
Very Low Intrinsic Capacitances
Excellent Switching Characteristics
Unrivalled Gate Charge : 13 nC (Typ.)
Extended Safe Operating Area
Lower R
DS(ON)
: 1.27 Ω (Typ.) @V
GS
=10V
100% Avalanche Tested
R
DS(on) typ
= 1.27 Ω
I
D
= 4.5 A
TO-220
1
2
3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
T
C
=25℃ unless otherwise specified
Parameter
Value
400
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/℃
– Continuous (T
C
= 25℃)
– Continuous (T
C
= 100℃)
– Pulsed
(Note 1)
4.5
2.85
18
±30
(Note 2)
(Note 1)
(Note 1)
(Note 3)
510
4.5
7.0
4.5
70
0.56
-55 to +150
300
Power Dissipation (T
C
= 25℃)
-
Derate above 25℃
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
Thermal Resistance Characteristics
Symbol
R
θJC
R
θCS
R
θJA
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
Parameter
Typ.
--
0.5
--
Max.
1.78
--
62.5
℃/W
Units
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