ALM-80110
0.25W Analog Variable Gain Amplifier
Data Sheet
Description
Avago Technologies ALM-80110 is a 0.25W Analog Con-
trolled Variable Gain Amplifier which operates from 0.4GHz
to 1.6GHz. The device provides an exceptionally high OIP3
level of 40dBm, which is maintained over a wide attenu-
ation range. The device features wide gain control range,
low current, excellent input and output return loss.
The ALM-80110 is housed in a miniature 5.0X5.0X1.1 mm
3
,
10-lead multiple-chips-on-board (MCOB) module package.
This part is suitable for the AGC/Temperature compensa-
tion circuits application in wireless infrastructure such
as Cellular/PCS/W-CDMA/WLLand and new generation
wireless technologies systems.
Features
x
Halogen free
x
Wide Gain Control Range
x
High OIP3 across attenuation range
Specifications
At 0.9GHz, V
dd
= 5V, I
total
= 110mA (typ), V
bias
= 4V, V
ctrl
= 5V @
25°C
x
OIP3 = 40.5dBm
x
Noise Figure = 4.8dB
x
Gain = 13.5dB
x
P1dB = 23.2dBm
x
IRL = 17dB, ORL = 12dB
x
Attenuation Range = 40dB
Pin connections and Package Marking
Application
80110
WWYY
XXXX
x
WLL, WLAN and other applications in the 400MHz to
1.6GHz range.
x
Transmitter and Receiver Gain Control
x
Temperature Compensation Circuitry
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model = 100 V
ESD Human Body Model = 650 V
Refer to Avago Application Note A004R:
Electrostatic Discharge, Damage and Control.
RFin 1
10 Not used
Not used 2
9 EXT Lout
Vbias 3
7 Vctrl
6 RFout
GND 5
Note :
Top View : Package marking provides orienation and identification
“80110” = Device Code
“WWYY“ = Workweek and Year Code
“XXXX” = Assembly Lot number
GND 4
8 GND
Figure 1. Simplified Schematic diagram
ALM-80110 Absolute Maximum Rating
(1)
T
C
= 25°C
Symbol
I
d,max
V
d.,max
V
ctrl_max
V
bias_max
P
d
P
in
T
j
Thermal Resistance
(2,3)
Parameter
Drain Current
Drain Voltage,
RF output to ground
Control Voltage
Biasing Voltage
Power Dissipation
CW RF Input Power
(4)
Junction Temperature
Units
mA
V
V
V
mW
dBm
°C
Absolute Maximum
140
5.5
7
15
770
26
150
(V
d
= 5.0V)
T
jc
= 77.2°C/W
Notes:
1. Operation of this device in excess of any of
these limits may cause permanent damage
2. Derate 12.95mW/°C for TL > 86°C
3. Thermal resistance measured using 150°C
Infra-Red Microscopy Technique.
4. Max rating for Pin is under Maximum
Attenuation mode i.e. Vctrl = 1V.
ALM-80110 Electrical Specification
(1)
T
C
= 25°C, Z
o
= 50:, V
dd
= 5.0V, V
bias
= 4.0V, V
ctrl
= 5.0V unless noted
Symbol
I
total
NF
Parameter and Test Condition
Total Operating Current Range
Noise Figure at minimal Attenuation
Frequency
N/A
0.45GHz
0.7GHz
0.9GHz
0.45GHz
0.7GHz
0.9GHz
0.45GHz
0.7GHz
0.9GHz
0.45GHz
0.7GHz
0.9GHz
0.45GHz
0.7GHz
0.9GHz
0.45GHz
0.7GHz
0.9GHz
0.45GHz
0.7GHz
0.9GHz
N/A
N/A
0.45GHz
0.7GHz
0.9GHz
Units
mA
dB
Min.
89
Typ.
110
5.5
4.7
4.8
17
15
13.5
40
40
40.5
23.5
23.3
23.2
12
20
17
10
10.5
12
30.5
30.5
30.5
Max.
134
stdev
0.002
5.4
0.090
Gain
Gain at minimal Attenuation
dB
12
dBm
36
dBm
22
dB
15
0.165
OIP3
(2)
Output Third Order Intercept Point
0.717
P1dB
Output Power at 1dB Gain Compression
0.068
NA
IRL
Input Return Loss
ORL
Output Return Loss
dB
NA
ISO
Isolation
dB
V
V
dB
2.7
1
NA
5
5
NA
NA
NA
Vbias
Vctrl
'
Gain
Attenuator Bias Voltage
Gain Variation Control Voltage
Gain Variation Range (from Vctrl=1V to 5V)
4
–
46
43
40
Note :
1. Measurements obtained from a test circuit described in Figure 53.
2. OIP3 test condition: F1 – F2 = 10MHz, with input power of -10dBm per tone measured at worst case side band.
3. Standard deviation data are based on at least 1000 pieces samples size taken from 2 wafer lots. Future wafers allocated to this product may have
nominal values anywhere between the upper and lower specification limits.
2
ALM-80110 Product Consistency Distribution at 900MHz
T
C
= 25°C, V
dd
= 5.0V, V
bias
= 4.0V
LSL
CPK=3
USL
CPK=2.3
USL
.09
.10
.11
.12
.13
4.3 4.4 4.5
4.6
4.7 4.8 4.9
5.0 5.1 5.2 5.3
5.4
Figure 2. Itotal at 900MHz
Figure 3. NF at 900MHz
LSL
CPK=3
USL
LSL
CPK=2.2
12
Figure 4. Gain at 900MHz
13
14
15
35
36
37
38
39
40
41
42
43
44
45
46
Figure 5. OIP3 at 900MHz
LSL
CPK=6
Note :
1. Statistics distribution determined from a sample size of 1000 parts
taken from 2 different wafers.
2. Future wafers allocation to this product may have typical values
anywhere between the minimum and maximum specification limits.
3. Measurements are made on production testboard, which represents
a trade-off between optimal OIP3, P1dB and NF. Circuit losses have
been de-embedded from actual measurements.
22
Figure 6. P1dB at 900MHz
23
24
3
ALM-80110 Application Circuit Data for 450MHz
T
C
= 25°C, V
dd
= 5.0V, V
bias
= 4.0V
50
45
40
35
30
25
20
15
1.0
1.5
2.0
2.5
3.0
3.5
Vctrl (V)
4.0
85°C
25°C
-40°C
4.5
5.0
P1dB (dBm)
OIP3 (dBm)
25.0
24.0
23.0
22.0
21.0
20.0
19.0
18.0
17.0
16.0
15.0
1.0
85°C
25°C
-40°C
1.5
2.0
2.5
3.0
3.5
Vctrl (V)
4.0
4.5
5.0
Figure 7. OIP3 vs Control Voltage and Temperature at 450MHz
Figure 8. P1dB vs Control Voltage and Temperature at 450MHz
20
15
10
5
0
-5
-10
-15
-20
-25
-30
-35
1.0
85°C
25°C
-40°C
1.5
2.0
2.5
3.0
3.5
Vctrl (V)
4.0
4.5
5.0
-8
-9
-10
-11
-12
-13
-14
-15
-16
-17
-18
1.0
85°C
25°C
-40°C
Gain (dB)
IRL (dB)
1.5
2.0
2.5
3.0
3.5
Vctrl (V)
4.0
4.5
5.0
Figure 9. Gain vs Control Voltage and Temperature at 450MHz
Figure 10. IRL vs Control Voltage and Temperature at 450MHz
-8
-9
-10
-11
-12
-13
-14
-15
-16
-17
-18
1.0
85°C
25°C
-40°C
1.5
2.0
2.5
3.0
3.5
Vctrl (V)
4.0
4.5
5.0
-25
-30
-35
-40
-45
-50
-55
-60
-65
-70
-75
-80
-85
1.0
Isolation (dB)
ORL (dB)
85°C
25°C
-40°C
1.5
2.0
2.5
3.0
3.5
Vctrl (V)
4.0
4.5
5.0
Figure 11. ORL vs Control Voltage and Temperature at 450MHz
Figure 12. Isolation vs Control Voltage and Temperature at 450MHz
4
ALM-80110 Application Circuit Data for 450MHz
(cont'd)
T
C
= 25°C, V
dd
= 5.0V, V
bias
= 4.0V
50
45
40
35
30
25
20
15
0
10
20
30
Attenuation (dB)
40
50
85°C
25°C
-40°C
P1dB (dBm)
OIP3 (dBm)
26
25
24
23
22
21
20
19
18
17
16
0
85°C
25°C
-40°C
10
20
30
Attenuation (dB)
40
50
Figure 13. OIP3 vs Attenuation and Temperature at 450MHz
Figure 14. P1dB vs Attenuation and Temperature at 450MHz
-8
-9
-10
-11
-12
-13
-14
-15
-16
-17
-18
0
10
20
30
Attenuation (dB)
40
85°C
25°C
-40°C
IRL (dB)
50
-8
-9
-10
-11
-12
-13
-14
-15
-16
-17
-18
ORL (dB)
85°C
25°C
-40°C
0
10
20
30
Attenuation (dB)
40
50
Figure 15. ORL vs Attenuation and Temperature at 450MHz
Figure 16. IRL vs Attenuation and Temperature at 450MHz
-25
-30
-35
-40
-45
-50
-55
-60
-65
-70
-75
-80
-85
0
10
20
30
Attenuation (dB)
40
50
85°C
25°C
-40°C
OIP3 (dBm)
48
46
44
42
40
38
36
50
34
150
250
350
450
550
Frequency (MHz)
650
750
85°C
25°C
-40°C
Isolation (dB)
Figure 17. Isolation vs Attenuation and Temperature at 450MHz
Figure 18. OIP3 vs Frequency and Temperature at Vctrl = 5V
5
京公网安备 11010802033920号
EEWORLD
