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MBR2535CT

Description
30 A, 35 V, SILICON, RECTIFIER DIODE, TO-220AB
Categorysemiconductor    Discrete semiconductor   
File Size556KB,3 Pages
ManufacturerSSC
Websitehttp://www.siliconstandard.com/
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MBR2535CT Overview

30 A, 35 V, SILICON, RECTIFIER DIODE, TO-220AB

MBR/B25xxCT Series
25A Dual Schottky Rectifiers
PRODUCT SUMMARY
Voltage ratings available from 35 to 60 Volts
FEATURES
Plastic packages have Underwriters Laboratory Flammability
Classification 94V-0
Dual rectifier construction, positive center tap
Metal-silicon junction, majority carrier conduction
Low power loss, high efficiency
Guard-ring for overvoltage protection
For use in low voltage, high frequency inverters, free wheeling,
and polarity protection applications
MECHANICAL DATA
High temperature soldering guaranteed:
250°C for 10 seconds, 0.25" (6.35mm) from case
Case: JEDEC TO-220AB (MBR...) or ITO-220AB (MBRB...) molded plastic body - for dimensions, see page 3
Terminals: Matte-Sn plated leads, solderable per MIL-STD-750, method 2026
Polarity: As marked
Mounting Position: Any
Mounting Torque: 10 in-lbs maximum
Weight: 0.08 ounce, 2.24 grams
Pb-free; RoHS-compliant
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25°C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Parameter
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
Maximum average forward
rectified current at
T
C
=130°C
Total device
Per leg
Symbol
V
RRM
V
RWM
V
DC
I
F(AV)
I
FRM
I
FSM
I
RRM
dv/dt
MBR2535CT MBR2545CT MBR2550CT MBR2560CT
MBRB2535CT
MBRB2545CT
MBRB2550CT MBRB2560CT
Units
Volts
Volts
Volts
Amps
Amps
Amps
35
35
35
45
45
45
25
12.5
3
0
150
1.0
10,000
50
50
50
60
60
60
Peak repetitive forward current per leg at (rated V
R
, sq.
wave
20kHz)
at T
C
=130
o
C
Peak forward surge current 8.3ms single half sine-wave
superimposed on rated load (JEDEC Method) per leg
Peak repetitive reverse surge current per leg at t
p
=
2.0
u
s, 1KHz
Voltage rate of change (rated V
R
)
Maximum instantaneous forward voltage per leg (Note
1)
at I
F
=12.5A,
T
c=25°C
at I
F
=12.5A, Tc=125°C
at I
F
=25A, Tc=25°
C
at I
F
=25A, Tc=125°C
Maximum reverse current at
rated DC blocking voltage
per leg (Note
1)
T
C
=25 C
T
C
=125
o
C
o
0.5
Amps
V/
us
-
V
F
-
0.82
0.73
0.2
I
R
40
R
θ
JC
1.5
0.75
0.65
-
-
1.0
mA
50
°C/W
Volt
Thermal resistance from junction to case per leg
Operating junction temperature range
Storage temperature range
Notes:
1. Pulse test: 300us pulse width, 1% duty cycle
T
J
T
STG
-55 to +150
-55 to +150
o
C
C
o
12/03/2006 Rev.4.01
www.SiliconStandard.com
1 of 3

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MBR2535CT MBR2545CT MBR2560CT MBR2550CT MBRB2535CT MBRB2550CT MBRB2545CT MBRB2560CT
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