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GZF10C/D4

Description
Zener Diode, 10V V(Z), 6%, 0.8W,
CategoryDiscrete semiconductor    diode   
File Size64KB,3 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet Parametric View All

GZF10C/D4 Overview

Zener Diode, 10V V(Z), 6%, 0.8W,

GZF10C/D4 Parametric

Parameter NameAttribute value
MakerVishay
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSINGLE
Diode typeZENER DIODE
Maximum dynamic impedance4 Ω
Number of components1
Maximum operating temperature175 °C
Maximum power dissipation0.8 W
Nominal reference voltage10 V
surface mountYES
Maximum voltage tolerance6%
Working test current50 mA
GZF3V6C thru GZF91C
New Product
Vishay Semiconductors
formerly General Semiconductor
V
Z
Range
3.6 to 91V
Power Dissipation
800mW
Zener Diodes
DO-219AB (SMF)
Cathode Band
Top View
1.8
±
0.1
1.0
±
0.2
5
°
0.98
±
0.1
5
°
Detail
Z
enlarged
Z
2.8
±
0.1
0.05 - 0.30
ted
ten
Pa
Mounting Pad Layout
1.6
1.2
1.2
0.60
±
0.25
0.00 – 0.10
3.7
±
0.2
Dimensions in millimeters
Mechanical Data
Case:
JEDEC DO-219 Plastic Case
Weight:
approx. 0.01g
Packaging codes/options:
D3/10K per 13” reel (8mm tape), 30K/box
D4/3K per 7” reel (8mm tape), 30K/box
Features
• Silicon Planar Power Zener Diodes.
• Low profile surface-mount package.
Maximum Ratings and Thermal Characteristics
Parameter
Zener Current (see Table “Characteristics”)
Power Dissipation at T
A
= 25°C
Thermal Resistance Junction to Ambient Air
Maximum Junction Temperature
Storage Temperature Range
Note:
(1) FR-4 or FR-5 board with 3 x 3mm solder pad layout
(T
A
= 25°C unless otherwise noted)
Symbol
Value
800
(1)
188
(1)
175
–65 to +175
Unit
P
tot
R
θJA
T
j
T
S
mW
°C/W
°C
°C
Document Number 88353
01-May-02
www.vishay.com
1

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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