HN58V257R-35 datasheet, PDF - EEWORLD Datasheet

HN58V257R-35: Description32KX8 EEPROM 3V, 350ns, PDSO32, PLASTIC, REVERSE, TSOP1-32; Categorystorage storage; File Size262KB，14 Pages; ManufacturerRenesas Electronics Corporation; Websitehttps://www.renesas.com/

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HN58V257R-35 Overview

32KX8 EEPROM 3V, 350ns, PDSO32, PLASTIC, REVERSE, TSOP1-32

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Renesas Electronics Corporation
Parts packaging code	TSOP1
package instruction	PLASTIC, REVERSE, TSOP1-32
Contacts	32
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum access time	350 ns
Other features	AUTOMATIC WRITE; PAGE WRITE; BYTE PROGRAMMABLE
JESD-30 code	R-PDSO-G32
JESD-609 code	e0
length	12.4 mm
memory density	262144 bit
Memory IC Type	EEPROM
memory width	8
Number of functions	1
Number of terminals	32
word count	32768 words
character code	32000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	32KX8
Package body material	PLASTIC/EPOXY
encapsulated code	TSOP1-R
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Programming voltage	3 V
Certification status	Not Qualified
Maximum seat height	1.2 mm
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	2.7 V
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	TIN LEAD
Terminal form	GULL WING
Terminal pitch	0.5 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
width	8 mm

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