0.5 A, 95 V, 8 CHANNEL, NPN, Si, POWER TRANSISTOR
| Parameter Name | Attribute value |
| Is it lead-free? | Lead free |
| Is it Rohs certified? | conform to |
| Maker | Microsemi |
| Parts packaging code | DIP |
| package instruction | IN-LINE, R-PDIP-T18 |
| Contacts | 18 |
| Reach Compliance Code | compli |
| ECCN code | EAR99 |
| Other features | LOGIC LEVEL COMPATIBLE |
| Maximum collector current (IC) | 0.5 A |
| Collector-emitter maximum voltage | 95 V |
| Configuration | 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR |
| Minimum DC current gain (hFE) | 1000 |
| JESD-30 code | R-PDIP-T18 |
| JESD-609 code | e3 |
| Humidity sensitivity level | 1 |
| Number of components | 8 |
| Number of terminals | 18 |
| Maximum operating temperature | 150 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | IN-LINE |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | NPN |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal surface | Matte Tin (Sn) |
| Terminal form | THROUGH-HOLE |
| Terminal location | DUAL |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| transistor applications | AMPLIFIER |
| Transistor component materials | SILICON |
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