KSC1008
NPN EPITAXIAL SILICON TRANSISTOR
LOW FREQUENCY AMPLIFIER
MEDIUM SPEED SWITCHING
•
Complement to KSA708
•
High Collector-Base Voltage: V
CBO
=80V
•
Collector Current: I
C
=700mA
•
Collector Dissipation: P
C
=800mW
TO-92
ABSOLUTE MAXIMUM RATINGS (T
A
=25°C)
°
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Rating
80
60
8
700
800
150
-55 ~ 150
Unit
V
V
V
mA
mW
°C
°C
1. Emitter 2. Base 3. Collector
ELECTRICAL CHARACTERISTICS (T
A
=25°C)
°
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain-Bandwidth Product
Output Capacitance
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE
(sat)
V
BE
(sat)
f
T
C
OB
Test Conditions
I
C
=100µA, I
E
=0
I
C
=10mA, I
B
=0
I
E
=10µA, I
C
=0
V
CB
=60V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=2V, I
C
=50mA
I
C
=500mA, I
B
=50mA
I
C
=500mA, I
B
=50mA
V
CE
=10V, I
C
=50mA
V
CB
=10V, I
E
=0
f=1MHz
Min
80
60
8
0.1
0.1
400
0.4
1.1
Typ
Max
Unit
V
V
V
µA
µA
V
V
MHz
pF
40
0.2
0.86
50
8
30
h
FE
CLASSIFICATION
Classification
h
FE
R
40-80
O
70-140
Y
120-240
G
200-400
Rev. B
©
1999 Fairchild Semiconductor Corporation
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effectiveness.
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Definition of Terms
Datasheet Identification
Advance Information
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Formative or
In Design
Definition
This datasheet contains the design specifications for
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