K4M563233D-EI1H datasheet, PDF

K4M563233D-EI1H: DescriptionSynchronous DRAM, 8MX32, 7ns, CMOS, PBGA90, FBGA-90; Categorystorage storage; File Size65KB，8 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/; Environmental Compliance

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K4M563233D-EI1H Overview

Synchronous DRAM, 8MX32, 7ns, CMOS, PBGA90, FBGA-90

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	SAMSUNG
Parts packaging code	BGA
package instruction	LFBGA, BGA90,9X15,32
Contacts	90
Reach Compliance Code	compliant
ECCN code	EAR99
access mode	FOUR BANK PAGE BURST
Maximum access time	7 ns
Other features	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	105 MHz
I/O type	COMMON
interleaved burst length	1,2,4,8
JESD-30 code	R-PBGA-B90
length	13 mm
memory density	268435456 bit
Memory IC Type	SYNCHRONOUS DRAM
memory width	32
Humidity sensitivity level	3
Number of functions	1
Number of ports	1
Number of terminals	90
word count	8388608 words
character code	8000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	8MX32
Package body material	PLASTIC/EPOXY
encapsulated code	LFBGA
Encapsulate equivalent code	BGA90,9X15,32
Package shape	RECTANGULAR
Package form	GRID ARRAY, LOW PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius)	260
power supply	3/3.3 V
Certification status	Not Qualified
refresh cycle	4096
Maximum seat height	1.45 mm
self refresh	YES
Continuous burst length	1,2,4,8,FP
Maximum standby current	0.0012 A
Maximum slew rate	0.3 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	2.7 V
Nominal supply voltage (Vsup)	3 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal form	BALL
Terminal pitch	0.8 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
width	11 mm

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