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P6KE180E3

Description
600 W, UNIDIRECTIONAL, SILICON, TVS DIODE
CategoryDiscrete semiconductor    diode   
File Size240KB,4 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Environmental Compliance
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P6KE180E3 Overview

600 W, UNIDIRECTIONAL, SILICON, TVS DIODE

P6KE180E3 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
package instructionO-PALF-W2
Contacts2
Reach Compliance Codecompli
ECCN codeEAR99
Maximum breakdown voltage198 V
Minimum breakdown voltage162 V
Breakdown voltage nominal value180 V
Shell connectionISOLATED
Maximum clamping voltage258 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 codeO-PALF-W2
JESD-609 codee3
Humidity sensitivity level1
Maximum non-repetitive peak reverse power dissipation600 W
Number of components1
Number of terminals2
Maximum operating temperature200 °C
Minimum operating temperature-65 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityUNIDIRECTIONAL
Maximum power dissipation5 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage146 V
Maximum reverse current5 µA
surface mountNO
technologyAVALANCHE
Terminal surfaceMATTE TIN
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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