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1N6267AE3

Description
1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE
CategoryDiscrete semiconductor    diode   
File Size22KB,1 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Environmental Compliance
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1N6267AE3 Overview

1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE

1N6267AE3 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerMicrosemi
package instructionO-PALF-W2
Contacts2
Manufacturer packaging codeCASE 1
Reach Compliance Codecompliant
ECCN codeEAR99
Is SamacsysN
Other featuresHIGH RELIABILITY
Maximum breakdown voltage7.14 V
Minimum breakdown voltage6.45 V
Breakdown voltage nominal value6.8 V
Shell connectionISOLATED
Maximum clamping voltage10.5 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 codeO-PALF-W2
JESD-609 codee3
Humidity sensitivity level1
Maximum non-repetitive peak reverse power dissipation1500 W
Number of components1
Number of terminals2
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityUNIDIRECTIONAL
Maximum power dissipation1.52 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage5.8 V
surface mountNO
technologyAVALANCHE
Terminal surfacePURE MATTE TIN
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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