BS62LV4008TC70 datasheet, PDF - EEWORLD Datasheet

BS62LV4008TC70: DescriptionStandard SRAM, 512KX8, 70ns, CMOS, PDSO32; Categorystorage storage; File Size374KB，10 Pages; ManufacturerBrilliance

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BS62LV4008TC70 Overview

Standard SRAM, 512KX8, 70ns, CMOS, PDSO32

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Brilliance
package instruction	TSSOP, TSSOP32,.8,20
Reach Compliance Code	unknown
Maximum access time	70 ns
I/O type	COMMON
JESD-30 code	R-PDSO-G32
JESD-609 code	e0
memory density	4194304 bit
Memory IC Type	STANDARD SRAM
memory width	8
Humidity sensitivity level	3
Number of terminals	32
word count	524288 words
character code	512000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	512KX8
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	TSSOP
Encapsulate equivalent code	TSSOP32,.8,20
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
Parallel/Serial	PARALLEL
power supply	2.5/3.3 V
Certification status	Not Qualified
Maximum standby current	8e-7 A
Minimum standby current	1.5 V
Maximum slew rate	0.024 mA
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal pitch	0.5 mm
Terminal location	DUAL

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