Sirenza Microdevices SGA-4186 is a high performance SiGe
HBT MMIC Amplifier. A Darlington configuration featuring 1
micron emitters provides high F
T
and excellent thermal
perfomance. The heterojunction increases breakdown voltage
and minimizes leakage current between junctions. Cancellation
of emitter junction non-linearities results in higher suppression
of intermodulation products. At 850 Mhz and 45mA , the SGA-
4186 typically provides +28.3 dBm output IP3, 10 dB of gain,
and +14.6 dBm of 1dB compressed power using a single positive
voltage supply. Only 2 DC-blocking capacitors, a bias resistor
and an optional RF choke are required for operation.
Gain & Return Loss vs. Frequency
16
12
Gain (dB)
V
D
= 3.2 V, I
D
= 45 mA (Typ.)
SGA-4186
DC-5000 MHz, Cascadable
SiGe HBT MMIC Amplifier
Product Features
Broadband Operation: DC-5000 MHz
Cascadable 50 Ohm
Patented SiGe Technology
Operates From Single Supply
0
-10
-20
Return Loss (dB)
GAIN
Low Thermal Resistance Package
8
IRL
Applications
PA Driver Amplifier
Cellular, PCS, GSM, UMTS
IF Amplifier
Wireless Data, Satellite
Units
dB
dBm
dBm
M Hz
dB
dB
dB
V
mA
°C/W
1950 M Hz
1950 M Hz
1950 M Hz
2.9
41
Frequency
850 M Hz
1950 M Hz
2400 M Hz
850 M Hz
1950 M Hz
850 M Hz
1950 M Hz
Min.
9.0
Ty p.
10.0
9.2
8.9
14.6
12.4
28.3
25.5
5000
20.3
24.4
5.0
3.2
45
97
3.5
49
Max.
11.0
4
0
0
1
ORL
-30
T
L
=+25ºC
-40
2
3
Frequency (GHz)
4
5
Sy mbol
G
P
1dB
OIP
3
Parameter
Small Signal Gain
Output Pow er at 1dB Compression
Output Third Order Intercept Point
Bandw idth
Determined by Return Loss (>10dB)
IRL
ORL
NF
V
D
I
D
R
TH
, j-l
Input Return Loss
Output Return Loss
Noise Figure
Device Operating Voltage
Device Operating Current
Thermal Resistance (junction to lead)
V
S
= 8 V
R
BIAS
= 110 Ohms
I
D
= 45 mA Typ.
T
L
= 25ºC
Test Conditions:
OIP
3
Tone Spacing = 1 MHz, Pout per tone = -5 dBm
Z
S
= Z
L
= 50 Ohms
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of
this information, and all such information shall be entirely at the users own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are
implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc..
All worldwide rights reserved.
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
1
http://www.sirenza.com
EDS-100637 Rev. D
Preliminary
SGA-4186 DC-5000 MHz Cascadable MMIC Amplifier
Typical RF Performance at Key Operating Frequencies
Sy mbol
Parameter
Unit
100
Frequency
Frequency (MHz)
Frequency (MHz)(MHz)
500
850
1950
2400
3500
G
OIP
3
P
1dB
IRL
ORL
S
12
NF
Small Signal Gain
Output Third Order Intercept Point
Output Pow er at 1dB Compression
Input Return Loss
Output Return Loss
Reverse Isolation
Noise Figure
V
S
= 8 V
V
S
= 8 V
R
BIAS
= 110 Ohms
R
BIAS
= 39 Ohms
dB
dBm
dBm
dB
dB
dB
dB
10.5
10.4
29.3
13.6
10.0
28.3
14.6
16.2
14.8
16.5
4.7
9.2
25.5
12.4
20.3
24.4
17.9
5.0
8.9
24.1
11.3
22.7
24.1
18.2
5.3
8.1
23.6
15.6
15.8
25.6
20.4
16.0
4.6
11.7
21.7
19.2
Test Conditions:
= 45 mA Typ.
II
D
= 80 mA Typ.
D
T = 25ºC
T
LL
= 25ºC
OIP Tone Spacing = 1 MHz, Pout per tone = -5 dBm
OIP
33
Tone Spacing = 1 MHz, Pout per tone = 0 dBm
Z
S
= Z = 50 Ohms
Z
S
= Z
LL
= 50 Ohms
Noise Figure vs. Frequency
V
D
= 3.2 V, I
D
= 45 mA (Typ.)
7
6
5
4
3
2
0
0.5
1
1.5
2
Frequency (GHz)
2.5
3
Absolute Maximum Ratings
Parameter
Max.
Device Current
(I
D
)
Max.
Device
Voltage (V
D
)
Max.
RF Input Pow er
Max.
Junction Temp
. (T
J
)
Operating Temp
. Range (T
L
)
Absolute Limit
90
mA
5V
+18 dBm
+1
50
°C
-40°C to +85°C
+150°C
Noise Figure (dB)
Max.
Storage Temp
.
T
L
=+25ºC
Operation of this device beyond any one of these limits may
cause permanent damage. For reliable continous operation,
the device voltage and current must not exceed the maximum
operating values specified in the table on page one.
Bias conditions should also satisfy the follow ing expression:
I
D
V
D
< (T
J
- T
L
) / R
TH
, j-l
35
30
OIP
3
(dBm)
25
20
V
D
=3.2 V, I
D
= 45 mA (Typ.)
OIP
3
vs. Frequency
18
15
P
1dB
(dBm)
12
9
V
D
= 3.2 V, I
D
= 45 mA (Typ.)
P
1dB
vs. Frequency
T
L
=+25ºC
15
0
0.5
1
1.5
2
Frequency (GHz)
2.5
3
T
L
=+25ºC
6
0
0.5
1
1.5
2
Frequency (GHz)
2.5
3
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
2
http://www.sirenza.com
EDS-100637 Rev. D
Preliminary
SGA-4186 DC-5000 MHz Cascadable MMIC Amplifier
Typical RF Performance Over Temperature (
Bias: V
D
= 3.2 V,
I
D
= 45 mA (Typ.)
)
16
12
S
21
(dB)
8
4
|
S
21
|
vs. Frequency
0
-10
S
11
(dB)
-20
-30
|
S
11
|
vs. Frequency
T
L
0
0
1
2
3
Frequency (GHz)
4
+25°C
-40°C
+85°C
T
L
-40
5
+25°C
-40°C
+85°C
0
1
2
3
Frequency (GHz)
4
5
-10
-15
S
12
(dB)
-20
-25
|
S
12
|
vs. Frequency
0
-10
S
22
(dB)
|
S
22
|
vs. Frequency
-20
-30
T
L
-30
0
1
2
3
Frequency (GHz)
4
+25°C
-40°C
+85°C
T
L
-40
+25°C
-40°C
+85°C
5
0
1
2
3
Frequency (GHz)
4
5
NOTE: Full S-parameter data available at
www.sirenza.com
522 Almanor Ave., Sunnyvale, CA 94085
Phone: (800) SMI-MMIC
3
http://www.sirenza.com
EDS-100637 Rev. D
Preliminary
SGA-4186 DC-5000 MHz Cascadable MMIC Amplifier
Basic Application Circuit
V
S
R
BIAS
1 uF
1000
pF
Application Circuit Element Values
Reference
Designator
Frequency (Mhz)
500
850
1950
2400
3500
C
D
L
C
C
B
C
D
L
C
220 pF
100 pF
68 nH
100 pF
68 pF
33 nH
68 pF
22 pF
22 nH
56 pF
22 pF
18 nH
39 pF
15 pF
15 nH
RF in
C
B
4
1
SGA-4186
3
2
C
B
RF out
R ecommended B ias R esistor Values for I
D
=45mA
R
BIAS
=( V
S
-V
D
) / I
D
Supply Voltage(V
S
)
R
BIAS
6V
62
8V
110
10 V
150
12 V
200
V
S
R
BIAS
1 uF
1000 pF
Note: R
BIAS
provi des D C bi as stabi li ty over temperature.
Mounting Instructions
1. Use a large ground pad area under device pins 2
and 4 with many plated through-holes as shown.
L
C
C
D
C
B
A41
C
B
2. We recommend 1 or 2 ounce copper. Measurements
for this data sheet were made on a 31 mil thick FR-4
board with 1 ounce copper on both sides.
Part Identification Marking
The part will be marked with an A41 designator on
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