BCV46TA datasheet, PDF - EEWORLD Datasheet

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BCV46TA: DescriptionSmall Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size36KB，1 Pages; ManufacturerZetex Semiconductors; Websitehttp://www.zetex.com/; Environmental Compliance

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Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN

BCV46TA Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Zetex Semiconductors
package instruction	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum collector current (IC)	0.5 A
Collector-emitter maximum voltage	60 V
Configuration	DARLINGTON
Minimum DC current gain (hFE)	2000
JESD-30 code	R-PDSO-G3
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	PNP
Certification status	Not Qualified
surface mount	YES
Terminal surface	Matte Tin (Sn)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	10
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	200 MHz
VCEsat-Max	1 V

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SOT23 PNP SILICON PLANAR

DARLINGTON TRANSISTORS

ISSUE 3 SEPTEMBER 1995

FEATURES

* Low saturation voltage

COMPLEMENTARY TYPE

PARTMARKING DETAILS

BCV26 - BCV27

BCV46 - BCV47

BCV26 - ZFD

BCV46 - ZFE

SYMBOL

V

CBO

V

CEO

V

EBO

I

CM

I

C

I

B

P

tot

T

j

:T

stg

BCV46

MIN. MAX.

-80

-60

-10

-100

-10

I

EBO

V

CE(sat)

V

BE(sat)

-100

-1.0

-1.5

4K

10K

20K

4K

200 Typical

4.5 Typical

-100

-10

-100

-1.0

-1.5

2K

4K

10K

2K

200 Typical

4.5 Typical

BCV26

-40

-30

-10

-800

-500

-100

330

-55 to +150

UNIT

V

nA

µ

A

µ

A

nA

V

C

BCV26

BCV46

E

B

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Base Current

Power Dissipation at T

amb

=25°C

Operating and Storage Temperature Range

PARAMETER

SYMBOL

BCV46

-80

-60

UNIT

V

mA

mW

°C

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

Collector-Base

Breakdown Voltage

Collector-Emitter

Breakdown Voltage

Emitter-Base

Breakdown Voltage

Collector Cut-Off

Current

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

BCV26

MIN. MAX.

-40

-30

-10

CONDITIONS.

I

C

=100

µ

A

I

C

=10mA *

I

E

=10

µ

A

V

CB

= -30V

V

CB

= -60V

V

CB

=-30V,T

amb

=150

o

C

V

CB

=-60V,T

amb

=150

o

C

V

EB

=-4V

I

C

=-100mA,I

B

=-0.1mA*

I

C

=-100mA,I

B

=-0.1mA*

I

C

=-100

µΑ,

V

CE

=-1V

I

C

=-10mA, V

CE

=-5V*

I

C

=-100mA, V

CE

=-5V*

I

C

=-500mA, V

CE

=-5V*

I

C

=-50mA, V

CE

=-5V

f = 20MHz

V

CB

=-10V, f=1MHz

Emitter Base

Cut-Off Current

Collector-Emitter

Saturation Voltage

Base-Emitter

Saturation Voltage

Static Forward Current h

FE

Transfer Ratio

Transition Frequency

Output Capacitance

f

T

C

obo

MHz

pF

*Measured under pulsed conditions. Pulse width=300

µ

s. Duty cycle

≤

2%

Spice parameter data is available upon request for these devices

Periodic Sample Test Only.

3 - 21

BCV46TA Related Products

	BCV46TA	BCV46TC
Description	Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN	Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN
Is it Rohs certified?	conform to	conform to
Maker	Zetex Semiconductors	Zetex Semiconductors
package instruction	SMALL OUTLINE, R-PDSO-G3	SOT-23, 3 PIN
Reach Compliance Code	compliant	not_compliant
ECCN code	EAR99	EAR99
Maximum collector current (IC)	0.5 A	0.5 A
Collector-emitter maximum voltage	60 V	60 V
Configuration	DARLINGTON	DARLINGTON
Minimum DC current gain (hFE)	2000	2000
JESD-30 code	R-PDSO-G3	R-PDSO-G3
JESD-609 code	e3	e3
Humidity sensitivity level	1	1
Number of components	1	1
Number of terminals	3	3
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260	260
Polarity/channel type	PNP	PNP
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal surface	Matte Tin (Sn)	MATTE TIN
Terminal form	GULL WING	GULL WING
Terminal location	DUAL	DUAL
Maximum time at peak reflow temperature	10	10
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	200 MHz	200 MHz
VCEsat-Max	1 V	1 V

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