MSA-1105
Cascadable Silicon Bipolar MMIC Amplifier
Data Sheet
Description
The MSA-1105 is a high performance silicon bipolar
Monolithic Microwave Integrated Circuit (MMIC) housed
in a low cost, surface mount plastic package. This MMIC
is designed for high dynamic range in either 50 or 75 Ω
systems by combining low noise figure with high IP
3
.
Typical applications include narrow and broadband linear
amplifiers in commercial and industrial systems.
Features
•
High Dynamic Range Cascadable 50Ω or
75Ω Gain Block
•
3 dB Bandwidth: 50 MHz to 1.3 GHz
•
17.5 dBm Typical P
1 dB
at 0.5 GHz
•
3.6 dB Typical Noise Figure at 0.5 GHz
•
Surface Mount Plastic Package
The MSA-series is fabricated using Avago’s 10 GHz
•
Tape-and-Reel Packaging Option Available
f
T
, 25 GHz f
MAX
silicon bipolar MMIC process which
uses nitride self-alignment, ion implantation, and
•
Lead-free Option Available
gold metallization to achieve excellent performance,
u
niformity and reliability. The use of an external bias
resistor for temperature and current stability also allows
bias flexibility.
05 Plastic Package
Typical Biasing Configuration
R
bias
V
CC
>
8
V
RFC (Optional)
C
block
IN
1
4
3
MSA
C
block
OUT
V
d
= 5.5 V
2
MSA-1105 Absolute Maximum Ratings
Parameter
Device Current
Power Dissipation
[,3]
RF Input Power
Junction Temperature
Storage Temperature
Absolute Maximum
[1]
80 mA
550 mW
+13 dBm
150°C
–65 to 150°C
Thermal Resistance
[2]
:
θ
jc
= 15°C/W
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. T
CASE
= 25°C.
3. Derate at 8 mW/°C for T
C
> 124°C.
Electrical Specifications
[1]
, T
A
= 25°C
Symbol
G
P
Parameters and Test Conditions: I
d
= 60 mA, Z
O
= 50 Ω
Power Gain (|S
1
|
)
f = 0.05 GHz
f = 0.5 GHz
f = 1.0 GHz
f = 0.1 to 1.0 GHz
f = 0.1 to 1.0 GHz
f = 0.1 to 1.0 GHz
f = 0.5 GHz
f = 0.5 GHz
f = 0.5 GHz
f = 0.5 GHz
Units
dB
dB
dB
dB
GHz
Min.
10.0
Typ.
1.7
1.0
10.5
±1.0
1.3
1.5:1
1.7:1
Max.
∆G
P
f
3 dB
VSWR
NF
P
1 dB
IP
3
t
D
V
d
dV/dT
Gain Flatness
3 dB Bandwidth
[]
Input VSWR
Output VSWR
50 Ω Noise Figure
Output Power at 1 dB Gain Compression
Third Order Intercept Point
Group Delay
Device Voltage
Device Voltage Temperature Coefficient
dB
dBm
dBm
psec
V
mV/°C
4.4
3.6
17.5
30.0
00
5.5
–8.0
6.6
Notes:
1. The recommended operating current range for this device is 40 to 70 mA.
Typical performance as a function of current is on the following page.
2. Referenced from 50 MHz gain (GP).
Ordering Information
Part Numbers
MSA-1105-STR
MSA-1105-STRG
MSA-1105-TR1
MSA-1105-TR1G
MSA-1105-TR
MSA-1105-TRG
No. of Devices
10
100
500
500
1500
1500
Comments
Bulk
Bulk
7" Reel
7" Reel
13" Reel
13" Reel
Note: Order part number with a “G” suffix if lead-free option is desired.
MSA-1105 Typical Scattering Parameters (Z
O
= 50 Ω, T
A
= 25°C, I
d
= 60 mA)
Freq.
GHz
.0005
.005
.05
.050
.100
.00
.300
.400
.500
.600
.700
.800
.900
1.000
1.500
.000
.500
3.000
Mag
.80
.6
.07
.06
.05
.06
.07
.09
.10
.11
.13
.15
.16
.18
.8
.38
.46
.53
S
11
Ang
dB
19.0
13.9
1.8
1.7
1.7
1.6
1.4
1.
1.0
11.8
11.5
11.
10.9
10.5
8.8
7.1
5.6
4.
S
21
Mag
8.94
4.98
4.36
4.33
4.31
4.6
4.19
4.10
4.00
3.88
3.76
3.63
3.49
3.37
.75
.8
1.90
1.6
Ang
171
163
174
174
170
16
154
146
138
131
13
116
109
10
7
48
8
11
dB
–6.0
–16.8
–16.4
–16.3
–16.4
–16.
–16.1
–15.8
–15.6
–15.4
–15.0
–14.7
–15.5
–14.1
–13.
–1.1
–11.9
–11.6
S
12
Mag
.050
.144
.151
.153
.15
.155
.157
.163
.166
.171
.178
.184
.188
.197
.19
.48
.54
.6
Ang
51
15
4
3
5
7
8
8
10
11
11
11
11
7
0
–4
–8
Mag
.81
.6
.08
.06
.06
.08
.10
.1
.14
.17
.18
.1
.
.4
.31
.34
.38
.40
S
22
Ang
–16
–64
–5
–48
–5
–73
–91
–105
–116
–16
–135
–144
–151
–159
170
151
134
1
k
0.53
0.93
1.08
1.08
1.09
1.08
1.07
1.06
1.05
1.04
1.03
1.01
1.01
1.00
1.00
0.99
1.0
1.04
–17
–6
–48
–38
–41
–58
–74
–91
–105
–116
–18
–136
–145
–15
174
150
133
118
Typical Performance, T
A
= 25°C, Z
O
= 50
Ω
(unless otherwise noted)
14
12
G
p
(dB)
10
8
6
4
2
0
.02
0
.05
0.1
0.5 1.0
2.0 3.0
0
2
4
V
d
(V)
6
8
FREQUENCY (GHz)
I
d
(mA)
Z
O
= 75
Z
O
= 50
T
C
= +85C
T
C
= +25C
80 T = –25C
C
60
P
1 dB
(dBm)
16
100
18
17
16
P
1 dB
13
12
40
5
NF (dB)
4
3
–25
+25
TEMPERATURE (C)
NF
+85
G
P
11
20
Figure 1. Typical Power Gain vs. Frequency,
I
d
= 60 mA.
Figure 2. Device Current vs. Voltage.
Figure 3. Output Power at 1 dB Gain Compression,
Noise Figure and Power Gain vs. Case Temperature,
f = 0.5 GHz, I
d
= 60 mA.
22
I
d
= 70 mA
5.5
I
d
= 70 mA
I
d
= 60 mA
I
d
= 40 mA
20
P
1 dB
(dBm)
5.0
NF (dB)
18
I
d
= 60 mA
4.5
16
4.0
14
I
d
= 40 mA
0.2 0.3
0.5
1.0
2.0
3.5
3.0
0.1
12
0.1
0.2 0.3
0.5
1.0
2.0
FREQUENCY (GHz)
FREQUENCY (GHz)
3
Figure 4. Output Power at 1 dB Gain Compression
vs. Frequency.
Figure 5. Noise Figure vs. Frequency.
Gp (dB)
05 Plastic Package Dimensions
GROUND
4
0.030
0.89
RF INPUT
A
1
0.030
DIA
0.76
RF OUTPUT
AND DC BIAS
3
0.030 ± 0.010
0.76 ± 0.25
(4 PLCS)
GROUND
2
0.135 ± 0.015
3.42 ± 0.25
(4 PLCS)
0.030
0.76
0.050
1.27
0.020
0.51
0.008 ± 0.002
0.20 ± 0.05
0.145
3.68
0.100 ± 0.010
2.54 ± 0.25
Notes:
(unless otherwise specified)
1. Dimensions are in
2. Tolerances
in .xxx = 0.005
mm .xx = 0.13
mm
0.0005 ± 0.010
(0.013 ± 0.25)
For product information and a complete list of distributors, please go to our web site:
www.avagotech.com
Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Limited in the United States and other countries.
Data subject to change. Copyright © 008 Avago Technologies, Limited. All rights reserved. Obsoletes 5989-746EN
AV0-13EN - May 15, 008