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LXP1008-23-4

Description
50 V, SILICON, PIN DIODE
CategoryDiscrete semiconductor    diode   
File Size136KB,3 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Environmental Compliance
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LXP1008-23-4 Overview

50 V, SILICON, PIN DIODE

LXP1008-23-4 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionR-PDSO-G3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Is SamacsysN
applicationSWITCHING
Minimum breakdown voltage50 V
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Maximum diode capacitance0.3 pF
Nominal diode capacitance0.3 pF
Diode component materialsSILICON
Maximum diode forward resistance1.5 Ω
Diode resistance test current10 mA
Diode resistance test frequency100 MHz
Diode typePIN DIODE
frequency bandL BAND
JESD-30 codeR-PDSO-G3
Minority carrier nominal lifetime0.2 µs
Number of components2
Number of terminals3
Maximum operating temperature125 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Maximum power dissipation0.25 W
Certification statusNot Qualified
Reverse test voltage20 V
surface mountYES
technologyPOSITIVE-INTRINSIC-NEGATIVE
Terminal formGULL WING
Terminal locationDUAL
Base Number Matches1
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