GC9001 – GC9011
TM
®
PASSIVE DEVICES – Spiral Bias Elements
RoHS Compliant
DESCRIPTION
The GC9000 series of spiral bias element chips are photolithographically
fabricated planar spiral conductors supported on a high quality fused quartz
substrate. These devices are designed to meet hybrid microwave circuit
requirements for DC power injection through Ku (or J) band. The actual spiral
bias element, consists of a 5 micron, nominal, thick plated gold spiral trace
with a 3 mil diameter bonding pad at either end.
A dense passivation is applied on the conductive portion of the spiral
geometry so that undesirable environmental or particulate effects during
operation can be prevented. The bonding pads are left exposed to provide
easy, low resistance lead attachment.
Fused quartz substrates are used to minimize dielectric losses, near zero T
CE
and provide durability during handling and assembly.
Contemporary fabrication processes combined with Microsemi Lowell’s
extensive experience in microwave component and hybrid circuit engineering
has generated a product that will be both operationally predictable and
reliable when used as a means to supply DC to a small signal hybrid
microwave circuit.
This series of devices meets RoHS requirements per EU Directive
2002/95/EC. The standard terminal finish is gold unless otherwise specified.
Consult the factory if you have special requirements.
KEY FEATURES
Dimensional Uniformity
Planar Design
Passivated Spiral Element
Physical and Dimensional Stability
Through Temp Cycle and Vibration
Models as a Lossy Transmission
Line
Eliminates Potting or Coating Wire-
wound Coils
Designed for Microwave
Applications From 2 to 18 GHz
Reduced Assembly Costs
RoHS Compliant
1
www.MICROSEMI.com
APPLICATIONS
Bias injection into oscillators, amplifiers and microwave switches
(bias tees). Can be used to bias tuning varactor diodes, pin diodes,
transistors and monolithic circuit components. These spiral elements
provide extreme freedom from in band resonance; very smooth wide
frequency response.
ABSOLUTE MAXIMUM RATINGS AT 25º C
(UNLESS OTHERWISE SPECIFIED)
Rating
Working Current
Storage Temperature
Operating Temperature
Symbol
I
T
STG
T
OP
Value
250
-65 to +200
-55 to +150
Unit
mA
ºC
ºC
APPLICATIONS/BENEFITS
RF Bias Networks
Wideband performance
IMPORTANT:
For the most current data, consult our website
:
www.MICROSEMI.com
Specifications are subject to change, consult factory for the latest information.
These devices are ESD sensitive and must be handled using ESD precautions.
These devices are supplied with gold
terminations suitable for wire-bonding.
1
Copyright
2007
Rev: 2009-01-19
Microsemi
Microwave Products
Page 1
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
GC9001 – GC9011
TM
®
PASSIVE DEVICES – Spiral Bias Elements
RoHS Compliant
.
ELECTRICAL PARAMETERS @ 25C
(unless otherwise specified)
L(nH)
R
DC
(Ohms)
(Typ)
(Typ)
Model Number
OUTLINE
GC9005
3
1.0
A
GC9001
6
1.5
A
GC9006
10
2.0
B
GC9002
15
2.5
B
GC9007
21
3.5
C
GC9008
28
4.0
C
GC9003
36
5.0
C
GC9009
45
6.0
D
GC9010
55
7.0
D
GC9011
68
8.0
D
GC9004
78
8.5
D
www.MICROSEMI.com
MECHANICAL DIMENSIONS
Chip
Chip
Thickness(C)
OUTLINE
L(A) X W(B)
(Inches)
(Inches)
(Max)
(+/-0.002)
A
B
C
D
0.031” X 0.031"
0.032” X 0.032"
0.041” X 0.041"
0.061” X 0.061"
0.011
0.011
.
0.011
0.011
GC9001 – GC9011
RECOMMENDED CHIP ATTACHMENT AND LEAD BONDING PROCEDURES
CHIP ATTACHMENT
Chip attachment to hybrid circuits or module bodies can
be accomplished with either conductive or nonconductive
epoxy paste. EPO TEK H-61 or EPO TEK H-20 are
examples of some commonly used epoxy pastes
RIBBON OR WIRE BONDING
Thermo-compression bonding is recommended. A temperature of
175°C with pressure of 25 grams would be adequate for bonding
most gold ribbon or wire. For optimum performance, attach RF
input to pad at center of coil and the bypass network (capacitance)
to outside pad.
Copyright
2007
Rev: 2009-01-19
Microsemi
Microwave Products
Page 2
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
京公网安备 11010802033920号
EEWORLD
