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M25PE40VMW6TG

Description
EEPROM, 512KX8, Serial, CMOS, PDSO8, 0.208 INCH, ROHS COMPLIANT, PLASTIC, SOP-8
Categorystorage    storage   
File Size1MB,62 Pages
ManufacturerNumonyx ( Micron )
Websitehttps://www.micron.com
Environmental Compliance
Download Datasheet Parametric View All

M25PE40VMW6TG Overview

EEPROM, 512KX8, Serial, CMOS, PDSO8, 0.208 INCH, ROHS COMPLIANT, PLASTIC, SOP-8

M25PE40VMW6TG Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerNumonyx ( Micron )
Parts packaging codeSOIC
package instruction0.208 INCH, ROHS COMPLIANT, PLASTIC, SOP-8
Contacts8
Reach Compliance Codecompliant
ECCN code3A991.B.1.B.1
Maximum clock frequency (fCLK)75 MHz
Data retention time - minimum20
Durability100000 Write/Erase Cycles
JESD-30 codeR-PDSO-G8
length5.62 mm
memory density4194304 bit
Memory IC TypeFLASH
memory width8
Number of functions1
Number of terminals8
word count524288 words
character code512000
Operating modeSYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize512KX8
Package body materialPLASTIC/EPOXY
encapsulated codeSOP
Encapsulate equivalent codeSOP8,.3
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Parallel/SerialSERIAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply3/3.3 V
Programming voltage2.7 V
Certification statusNot Qualified
Maximum seat height2.5 mm
Serial bus typeSPI
Maximum standby current0.00001 A
Maximum slew rate0.015 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)2.7 V
Nominal supply voltage (Vsup)3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal formGULL WING
Terminal pitch1.27 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
typeNOR TYPE
write protectHARDWARE/SOFTWARE
M25PE40
4 Mbit, page-erasable serial Flash memory with
byte alterability, 75 MHz SPI bus, standard pinout
Features
SPI bus compatible serial interface
4 Mbit page-erasable Flash memory
Page size: 256 bytes
– Page Write in 11 ms (typical)
– Page Program in 0.8 ms (typical)
– Page Erase in 10 ms (typical)
Subsector Erase (4 Kbytes)
Sector Erase (64 Kbytes)
Bulk Erase (4 Mbits)
2.7 V to 3.6 V single supply voltage
75 MHz clock rate (maximum)
Deep Power-down mode 1 µA (typical)
Electronic signature
– JEDEC standard two-byte signature
(8013h)
Software write protection on a 64-Kbyte sector
basis
Hardware write protection of the memory area
selected using the BP0, BP1 and BP2 bits
More than 100 000 Write cycles
More than 20 year data retention
Packages
– ECOPACK® (RoHS compliant)
SO8N (MN) 150 mils
SO8W (MW) 208 mils
VFQFPN8 (MP)
6 × 5 mm (MLP8)
January 2008
Rev 9
1/62
www.numonyx.com
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