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NT256D64S88C0G-5T

Description
DDR DRAM Module, 32MX64, 0.7ns, CMOS, DIMM-184
Categorystorage    storage   
File Size489KB,15 Pages
ManufacturerNanya
Websitehttp://www.nanya.com/cn
Nanya Technology Co., Ltd. aims to become the best DRAM (dynamic random access memory) supplier. It emphasizes customer service and strengthens product R&D and manufacturing through close cooperation with partners, thereby providing customers with comprehensive products and system solutions. In the face of the growing niche DRAM market, Nanya Technology not only provides products ranging from 128Mb to 8Gb, but also continues to expand product diversification. The main application markets include digital TV, set-top box (STB), network communication, tablet computer and other smart electronic systems, automotive and industrial products. At the same time, in order to meet the needs of the rapidly growing mobile and wearable device market, Nanya Technology is more focused on the research and development and manufacturing of low-power memory products. In recent years, Nanya Technology has actively operated in the niche memory market, focusing on the research and development of low-power and customized core product lines. In terms of process progress, it has also introduced 20nm process technology and is committed to the production of DDR4 and LPDDR4 products, hoping to further enhance its overall competitiveness. Nanya Technology will also continue to strengthen its high value-added niche memory products and perfect customer service, enhance core business operating performance, ensure the rights and interests of all shareholders, and create sustainable business value for the company.
Download Datasheet Parametric View All

NT256D64S88C0G-5T Overview

DDR DRAM Module, 32MX64, 0.7ns, CMOS, DIMM-184

NT256D64S88C0G-5T Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerNanya
Parts packaging codeDIMM
package instructionDIMM, DIMM184
Contacts184
Reach Compliance Codecompliant
ECCN codeEAR99
access modeSINGLE BANK PAGE BURST
Maximum access time0.7 ns
Other featuresAUTO/SELF REFRESH
Maximum clock frequency (fCLK)200 MHz
I/O typeCOMMON
JESD-30 codeR-XDMA-N184
JESD-609 codee4
memory density2147483648 bit
Memory IC TypeDDR DRAM MODULE
memory width64
Number of functions1
Number of ports1
Number of terminals184
word count33554432 words
character code32000000
Operating modeSYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize32MX64
Output characteristics3-STATE
Package body materialUNSPECIFIED
encapsulated codeDIMM
Encapsulate equivalent codeDIMM184
Package shapeRECTANGULAR
Package formMICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply2.6 V
Certification statusNot Qualified
refresh cycle8192
self refreshYES
Maximum standby current0.032 A
Maximum slew rate1.656 mA
Maximum supply voltage (Vsup)2.7 V
Minimum supply voltage (Vsup)2.5 V
Nominal supply voltage (Vsup)2.6 V
surface mountNO
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceGold (Au)
Terminal formNO LEAD
Terminal pitch1.27 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
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