BSS64R datasheet, PDF - EEWORLD Datasheet

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BSS64R: DescriptionSmall Signal Bipolar Transistor, 0.1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size26KB，1 Pages; ManufacturerZetex Semiconductors; Websitehttp://www.zetex.com/; Environmental Compliance

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BSS64R Overview

Small Signal Bipolar Transistor, 0.1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN

BSS64R Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Zetex Semiconductors
package instruction	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	80 V
Configuration	SINGLE
Minimum DC current gain (hFE)	20
JESD-30 code	R-PDSO-G3
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.2 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Matte Tin (Sn)
Terminal form	GULL WING
Terminal location	DUAL
Transistor component materials	SILICON
Nominal transition frequency (fT)	100 MHz

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SOT23 NPN SILICON PLANAR

HIGH VOLTAGE TRANSISTOR

ISSUE 2 SEPTEMBER 95

7

BSS64

C

B

E

COMPLIMENTARY TYPE -

PARTMARKING DETAIL -

BSS63

BSS64 - U3

BSS64R - U6

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Power Dissipation at T

amb

=25°C

Operating and Storage Temperature Range

SYMBOL

V

CBO

V

CEO

V

EBO

I

C

P

TOT

t

j

:t

stg

VALUE

120

80

5

100

330

-55 to +150

UNIT

V

mA

mW

°C

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C).

PARAMETER

Collector-Base

Breakdown Voltage

Collector-Emitter

Breakdown Voltage

Emitter-Base Breakdown

Voltage

Collector Cut-Off Current

Emitter Cut-Off Current

Collector-Emitter

Saturation Voltage

Base-Emitter Saturation

Voltage

Static Forward Current

SYMBOL

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

I

EBO

V

CE(sat)

V

BE(sat)

h

FE

MIN.

120

80

5

100

50

200

150

200

1.2

Typ.

60

80

55

Typ.

100

MHz

MAX.

UNIT

V

nA

CONDITIONS.

I

C

=100

µ

A

I

C

=4mA

I

E

=100

µ

A

V

CB

=90V

V

CB

=90V,T

j

=150

o

C

V

EB

=5V

I

C

=4mA, I

B

=400

µ

A

I

C

=50mA, I

B

=15mA

I

C

=4mA, I

B

=400

µ

A

I

C

=1mA, V

CE

=-1V

I

C

=10mA, V

CE

=1V

I

C

=20mA, V

CE

=1V

V

CE

=10V, I

C

=4mA

f=35 MHz

V

CB

=10V, f=1MHz

µ

A

nA

mV

20

Transition Frequency

f

T

60

Typ.

3

Output Capacitance

C

obo

5

pF

* Measured under pulsed conditions. Pulse width=300

µ

s. Duty cycle

≤

2%

PAGE NUMBER

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