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XP1035-QH-0G00

Description
5900 MHz - 9500 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER
CategoryTopical application    Wireless rf/communication   
File Size797KB,7 Pages
ManufacturerMimix Broadband (MACOM)
Websitehttp://www.macom.com
Download Datasheet Parametric Compare View All

XP1035-QH-0G00 Overview

5900 MHz - 9500 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER

XP1035-QH-0G00 Parametric

Parameter NameAttribute value
Maximum operating temperature85 Cel
Minimum operating temperature-55 Cel
Maximum input power15 dBm
Maximum operating frequency9500 MHz
Minimum operating frequency5900 MHz
Processing package description4 X 4 MM, ROHS COMPLIANT, QFN-24
Lead-freeYes
EU RoHS regulationsYes
stateACTIVE
structureCOMPONENT
terminal coatingMATTE TIN OVER COPPER
Microwave RF TypeWIDE BAND HIGH POWER
5.9-9.5 GHz Linear Power Amplifier
QFN, 4x4mm
February 2010 - Rev 17-Feb-10
P1035-QH
Features
26 dB Small Signal Gain
39 dBm Third Order Intercept Point (OIP3)
Integrated Power Detector
4x4mm QFN Package, RoHS Compliant
100% RF Testing
General Description
The XP1035-QH is a packaged linear power amplifier
that operates over the 5.9-9.5 GHz frequency band. The
device provides 26 dB gain and 39 dBm Output Third
Order Intercept Point (OIP3) across the band and is
offered in an industry standard, fully molded 4x4mm
QFN package. The packaged amplifier is comprised of
a three stage power amplifier with an integrated,
temperature compensated on-chip power detector.
The device includes on-chip ESD protection structures
and DC by-pass capacitors to ease the implementation
and volume assembly of the packaged part. The device
is manufactured in GaAs PHEMT device technology
with BCB wafer coating to enhance ruggedness and
repeatability of performance. The XP1035-QH is well
suited for Point-to-Point Radio, LMDS, SATCOM and
VSAT applications.
Absolute Maximum Ratings
1
Supply Voltage (Vd1,2,3)
Supply Current (Id1,2,3)
Gate Bias Voltage (Vg1,2,3)
Max Power Dissipation
(Pdiss)
RF Input Power
Operating Temperature (Ta)
Storage Temperature (Tstg)
Channel Temperature (Tch)
2
MSL Level (MSL)
+7.2V
600 mA
-3V
4.2W
+15 dBm
-55 to +85 ºC
-65 to +165 ºC
150 ºC
MSL3
(1) Operation of this device above any one of these parameters
may cause permanent damage.
(2) Channel temperature directly affects a device’s MTTF.
Channel temperature should be kept as low as possible to
maximize lifetime.
Electrical Characteristics (Ambient Temperature T = 25
o
C)
Parameter
Frequency Range (f )
Small Signal Gain (S21)
Input Return Loss (S11)
Output Return Loss (S22)
Reverse Isolation (S12)
Psat
P1dB
OIP3
Drain Bias Voltage (Vd1,2,3)
Detector Bias Voltage (Vdet,ref )
Gate Bias Voltage (Vg1,2,3)
Supply Current (Id1)
Supply Current (Id2)
Supply Current (Id3)
Units
GHz
dB
dB
dB
dB
dBm
dBm
dBm
VDC
VDC
VDC
mA
mA
mA
Min.
5.9
Typ.
-
26
13
10
45
29
27.5
39
6
5
-1
70
140
280
Max.
9.5
-2
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 1 of 7
Characteristic Data and Specifications are subject to change without notice.
©2010
Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.

XP1035-QH-0G00 Related Products

XP1035-QH-0G00 XP1035-QH-0G0T XP1035-QH-EV1 XP1035-QH XP1035-QH_10
Description 5900 MHz - 9500 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER 5900 MHz - 9500 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER 5900 MHz - 9500 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER 5900 MHz - 9500 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER 5900 MHz - 9500 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER
Maximum operating temperature 85 Cel 85 °C 85 Cel 85 Cel 85 Cel
Minimum operating temperature -55 Cel -55 °C -55 Cel -55 Cel -55 Cel
Maximum operating frequency 9500 MHz 9500 MHz 9500 MHz 9500 MHz 9500 MHz
Minimum operating frequency 5900 MHz 5900 MHz 5900 MHz 5900 MHz 5900 MHz
structure COMPONENT COMPONENT COMPONENT COMPONENT COMPONENT
Maximum input power 15 dBm - 15 dBm 15 dBm 15 dBm
Processing package description 4 X 4 MM, ROHS COMPLIANT, QFN-24 - 4 X 4 MM, ROHS COMPLIANT, QFN-24 4 X 4 MM, ROHS COMPLIANT, QFN-24 4 X 4 MM, ROHS COMPLIANT, QFN-24
Lead-free Yes - Yes Yes Yes
EU RoHS regulations Yes - Yes Yes Yes
state ACTIVE - ACTIVE ACTIVE ACTIVE
terminal coating MATTE TIN OVER COPPER - MATTE TIN OVER COPPER MATTE TIN OVER COPPER MATTE TIN OVER COPPER
Microwave RF Type WIDE BAND HIGH POWER - WIDE BAND HIGH POWER WIDE BAND HIGH POWER WIDE BAND HIGH POWER

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