MT4VDDT3264HY-40BJ1 datasheet, PDF

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MT4VDDT3264HY-40BJ1: DescriptionDDR DRAM Module, 32MX64, 0.7ns, CMOS, LEAD FREE, SODIMM-200; Categorystorage storage; File Size357KB，13 Pages; ManufacturerMicron Technology; Websitehttp://www.mdtic.com.tw/; Environmental Compliance

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MT4VDDT3264HY-40BJ1 Overview

DDR DRAM Module, 32MX64, 0.7ns, CMOS, LEAD FREE, SODIMM-200

MT4VDDT3264HY-40BJ1 Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Micron Technology
Parts packaging code	SODIMM
package instruction	DIMM, DIMM200,24
Contacts	200
Reach Compliance Code	compliant
ECCN code	EAR99
access mode	SINGLE BANK PAGE BURST
Maximum access time	0.7 ns
Other features	AUTO/SELF REFRESH; WD-MAX
Maximum clock frequency (fCLK)	200 MHz
I/O type	COMMON
JESD-30 code	R-XZMA-N200
JESD-609 code	e4
length	67.6 mm
memory density	2147483648 bit
Memory IC Type	DDR DRAM MODULE
memory width	64
Number of functions	1
Number of ports	1
Number of terminals	200
word count	33554432 words
character code	32000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	32MX64
Output characteristics	3-STATE
Package body material	UNSPECIFIED
encapsulated code	DIMM
Encapsulate equivalent code	DIMM200,24
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius)	260
power supply	2.6 V
Certification status	Not Qualified
refresh cycle	8192
Maximum seat height	31.9 mm
self refresh	YES
Maximum slew rate	1.92 mA
Maximum supply voltage (Vsup)	2.7 V
Minimum supply voltage (Vsup)	2.5 V
Nominal supply voltage (Vsup)	2.6 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Gold (Au)
Terminal form	NO LEAD
Terminal pitch	0.6 mm
Terminal location	ZIG-ZAG
Maximum time at peak reflow temperature	30
width	2.45 mm

MT4VDDT3264HY-40BJ1 Related Products

	MT4VDDT3264HY-40BJ1	MT4VDDT1664HY-335M1	MT4VDDT1664HY-335F3	MT4VDDT1664HY-335K1	MT4VDDT3264HY-335F2	MT4VDDT3264HY-335J1
Description	DDR DRAM Module, 32MX64, 0.7ns, CMOS, LEAD FREE, SODIMM-200	DDR DRAM Module, 16MX64, CMOS, ROHS COMPLIANT, SODIMM-200	DDR DRAM Module, 16MX64, 0.7ns, CMOS, PDMA200	DDR DRAM Module, 16MX64, 0.7ns, CMOS, PDMA200	DDR DRAM Module, 32MX64, 0.7ns, CMOS, LEAD FREE, SODIMM-200	DDR DRAM Module, 32MX64, 0.7ns, CMOS, PDMA200
Maker	Micron Technology	Micron Technology	Micron Technology	Micron Technology	Micron Technology	Micron Technology
package instruction	DIMM, DIMM200,24	DIMM,	DIMM, DIMM200,24	DIMM, DIMM200,24	DIMM, DIMM200,24	DIMM, DIMM200,24
Reach Compliance Code	compliant	unknown	unknown	unknown	unknown	compliant
JESD-30 code	R-XZMA-N200	R-XZMA-N200	R-PDMA-N200	R-XDMA-N200	R-XZMA-N200	R-PDMA-N200
memory density	2147483648 bit	1073741824 bit	1073741824 bit	1073741824 bit	2147483648 bit	2147483648 bit
Memory IC Type	DDR DRAM MODULE	DDR DRAM MODULE	DDR DRAM MODULE	DDR DRAM MODULE	DDR DRAM MODULE	DDR DRAM MODULE
memory width	64	64	64	64	64	64
Number of terminals	200	200	200	200	200	200
word count	33554432 words	16777216 words	16777216 words	16777216 words	33554432 words	33554432 words
character code	32000000	16000000	16000000	16000000	32000000	32000000
Maximum operating temperature	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C
organize	32MX64	16MX64	16MX64	16MX64	32MX64	32MX64
Package body material	UNSPECIFIED	UNSPECIFIED	PLASTIC/EPOXY	UNSPECIFIED	UNSPECIFIED	PLASTIC/EPOXY
encapsulated code	DIMM	DIMM	DIMM	DIMM	DIMM	DIMM
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY
Nominal supply voltage (Vsup)	2.6 V	2.5 V	2.5 V	2.5 V	2.5 V	2.5 V
surface mount	NO	NO	NO	NO	NO	NO
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal form	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD
Terminal location	ZIG-ZAG	ZIG-ZAG	DUAL	DUAL	ZIG-ZAG	DUAL
Is it Rohs certified?	conform to	-	conform to	conform to	conform to	conform to
access mode	SINGLE BANK PAGE BURST	SINGLE BANK PAGE BURST	-	SINGLE BANK PAGE BURST	SINGLE BANK PAGE BURST	-
Maximum access time	0.7 ns	-	0.7 ns	0.7 ns	0.7 ns	0.7 ns
Other features	AUTO/SELF REFRESH; WD-MAX	AUTO/SELF REFRESH; WD-MAX	-	AUTO/SELF REFRESH; WD-MAX	AUTO/SELF REFRESH; WD-MAX	-
Maximum clock frequency (fCLK)	200 MHz	-	167 MHz	167 MHz	167 MHz	167 MHz
I/O type	COMMON	-	COMMON	COMMON	COMMON	COMMON
length	67.6 mm	67.6 mm	-	67.6 mm	67.6 mm	-
Number of functions	1	1	-	1	1	-
Number of ports	1	1	-	1	1	-
Operating mode	SYNCHRONOUS	SYNCHRONOUS	-	SYNCHRONOUS	SYNCHRONOUS	-
Output characteristics	3-STATE	-	3-STATE	3-STATE	3-STATE	3-STATE
Encapsulate equivalent code	DIMM200,24	-	DIMM200,24	DIMM200,24	DIMM200,24	DIMM200,24
power supply	2.6 V	-	2.5 V	2.5 V	2.5 V	2.5 V
Certification status	Not Qualified	-	Not Qualified	Not Qualified	Not Qualified	Not Qualified
refresh cycle	8192	-	8192	8192	8192	8192
Maximum seat height	31.9 mm	31.9 mm	-	31.9 mm	31.9 mm	-
self refresh	YES	YES	-	YES	YES	-
Maximum slew rate	1.92 mA	-	1.76 mA	1.08 mA	1.62 mA	1.62 mA
Maximum supply voltage (Vsup)	2.7 V	2.7 V	-	2.7 V	2.7 V	-
Minimum supply voltage (Vsup)	2.5 V	2.3 V	-	2.3 V	2.3 V	-
Terminal pitch	0.6 mm	-	0.6 mm	0.6 mm	0.6 mm	0.6 mm
width	2.45 mm	2.45 mm	-	2.45 mm	2.45 mm	-

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