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HZM12NB1

Description
Zener Diode, 11.66V V(Z), 2.0583%, 0.2W, Silicon, Unidirectional
CategoryDiscrete semiconductor    diode   
File Size140KB,10 Pages
ManufacturerHitachi (Renesas )
Websitehttp://www.renesas.com/eng/
Download Datasheet Parametric View All

HZM12NB1 Overview

Zener Diode, 11.66V V(Z), 2.0583%, 0.2W, Silicon, Unidirectional

HZM12NB1 Parametric

Parameter NameAttribute value
MakerHitachi (Renesas )
package instructionR-PDSO-G3
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeZENER DIODE
Maximum dynamic impedance35 Ω
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
polarityUNIDIRECTIONAL
Maximum power dissipation0.2 W
Certification statusNot Qualified
Nominal reference voltage11.66 V
Maximum reverse current2 µA
surface mountYES
technologyZENER
Terminal formGULL WING
Terminal locationDUAL
Maximum voltage tolerance2.0583%
Working test current5 mA

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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