QDR SRAM, 4MX9, 0.45ns, CMOS, PBGA165, 13 X 15 MM, 1 MM PITCH, FPBGA-165
| Parameter Name | Attribute value |
| Is it lead-free? | Lead free |
| Is it Rohs certified? | conform to |
| Maker | GSI Technology |
| Parts packaging code | BGA |
| package instruction | LBGA, BGA165,11X15,40 |
| Contacts | 165 |
| Reach Compliance Code | compliant |
| ECCN code | 3A991.B.2.B |
| Maximum access time | 0.45 ns |
| Other features | PIPELINED ARCHITECTURE |
| Maximum clock frequency (fCLK) | 333 MHz |
| I/O type | SEPARATE |
| JESD-30 code | R-PBGA-B165 |
| JESD-609 code | e1 |
| length | 15 mm |
| memory density | 37748736 bit |
| Memory IC Type | QDR SRAM |
| memory width | 9 |
| Humidity sensitivity level | 3 |
| Number of functions | 1 |
| Number of terminals | 165 |
| word count | 4194304 words |
| character code | 4000000 |
| Operating mode | SYNCHRONOUS |
| Maximum operating temperature | 70 °C |
| Minimum operating temperature | |
| organize | 4MX9 |
| Output characteristics | 3-STATE |
| Package body material | PLASTIC/EPOXY |
| encapsulated code | LBGA |
| Encapsulate equivalent code | BGA165,11X15,40 |
| Package shape | RECTANGULAR |
| Package form | GRID ARRAY, LOW PROFILE |
| Parallel/Serial | PARALLEL |
| Peak Reflow Temperature (Celsius) | 260 |
| power supply | 1.5/1.8,1.8 V |
| Certification status | Not Qualified |
| Maximum seat height | 1.4 mm |
| Minimum standby current | 1.7 V |
| Maximum supply voltage (Vsup) | 1.9 V |
| Minimum supply voltage (Vsup) | 1.7 V |
| Nominal supply voltage (Vsup) | 1.8 V |
| surface mount | YES |
| technology | CMOS |
| Temperature level | COMMERCIAL |
| Terminal surface | Tin/Silver/Copper (Sn/Ag/Cu) |
| Terminal form | BALL |
| Terminal pitch | 1 mm |
| Terminal location | BOTTOM |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| width | 13 mm |
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