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M366F0883BJ2-C50

Description
EDO DRAM Module, 8MX64, 50ns, CMOS, DIMM-168
Categorystorage    storage   
File Size461KB,21 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
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M366F0883BJ2-C50 Overview

EDO DRAM Module, 8MX64, 50ns, CMOS, DIMM-168

M366F0883BJ2-C50 Parametric

Parameter NameAttribute value
MakerSAMSUNG
Parts packaging codeDIMM
package instructionDIMM, DIMM168
Contacts168
Reach Compliance Codeunknown
ECCN codeEAR99
access modeFAST PAGE WITH EDO
Maximum access time50 ns
Other featuresRAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I/O typeCOMMON
JESD-30 codeR-XDMA-N168
memory density536870912 bit
Memory IC TypeEDO DRAM MODULE
memory width64
Number of functions1
Number of ports1
Number of terminals168
word count8388608 words
character code8000000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize8MX64
Output characteristics3-STATE
Package body materialUNSPECIFIED
encapsulated codeDIMM
Encapsulate equivalent codeDIMM168
Package shapeRECTANGULAR
Package formMICROELECTRONIC ASSEMBLY
power supply3.3 V
Certification statusNot Qualified
refresh cycle8192
Maximum standby current0.004 A
Maximum slew rate0.8 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountNO
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formNO LEAD
Terminal pitch1.27 mm
Terminal locationDUAL
DRAM MODULE
M366F080(8)3BJ2-C
Unbuffered 8Mx64 DIMM
(8Mx8 base)
Revision 0.1
June 1998

M366F0883BJ2-C50 Related Products

M366F0883BJ2-C50 M366F0803BJ2-C60 M366F0803BJ2-C50 M366F0883BJ2-C60
Description EDO DRAM Module, 8MX64, 50ns, CMOS, DIMM-168 EDO DRAM Module, 8MX64, 60ns, CMOS, DIMM-168 EDO DRAM Module, 8MX64, 50ns, CMOS, DIMM-168 EDO DRAM Module, 8MX64, 60ns, CMOS, DIMM-168
Parts packaging code DIMM DIMM DIMM DIMM
package instruction DIMM, DIMM168 DIMM, DIMM168 DIMM, DIMM168 DIMM, DIMM168
Contacts 168 168 168 168
Reach Compliance Code unknown unknown unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99
access mode FAST PAGE WITH EDO FAST PAGE WITH EDO FAST PAGE WITH EDO FAST PAGE WITH EDO
Maximum access time 50 ns 60 ns 50 ns 60 ns
Other features RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I/O type COMMON COMMON COMMON COMMON
JESD-30 code R-XDMA-N168 R-XDMA-N168 R-XDMA-N168 R-XDMA-N168
memory density 536870912 bit 536870912 bit 536870912 bit 536870912 bit
Memory IC Type EDO DRAM MODULE EDO DRAM MODULE EDO DRAM MODULE EDO DRAM MODULE
memory width 64 64 64 64
Number of functions 1 1 1 1
Number of ports 1 1 1 1
Number of terminals 168 168 168 168
word count 8388608 words 8388608 words 8388608 words 8388608 words
character code 8000000 8000000 8000000 8000000
Operating mode ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
Maximum operating temperature 70 °C 70 °C 70 °C 70 °C
organize 8MX64 8MX64 8MX64 8MX64
Output characteristics 3-STATE 3-STATE 3-STATE 3-STATE
Package body material UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED
encapsulated code DIMM DIMM DIMM DIMM
Encapsulate equivalent code DIMM168 DIMM168 DIMM168 DIMM168
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY MICROELECTRONIC ASSEMBLY
power supply 3.3 V 3.3 V 3.3 V 3.3 V
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
refresh cycle 8192 4096 4096 8192
Maximum standby current 0.004 A 0.004 A 0.004 A 0.004 A
Maximum slew rate 0.8 mA 0.88 mA 0.96 mA 0.72 mA
Maximum supply voltage (Vsup) 3.6 V 3.6 V 3.6 V 3.6 V
Minimum supply voltage (Vsup) 3 V 3 V 3 V 3 V
Nominal supply voltage (Vsup) 3.3 V 3.3 V 3.3 V 3.3 V
surface mount NO NO NO NO
technology CMOS CMOS CMOS CMOS
Temperature level COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
Terminal form NO LEAD NO LEAD NO LEAD NO LEAD
Terminal pitch 1.27 mm 1.27 mm 1.27 mm 1.27 mm
Terminal location DUAL DUAL DUAL DUAL
Maker SAMSUNG - SAMSUNG SAMSUNG
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