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BYQ28E-100-HE3/45

Description
DIODE 5 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode
CategoryDiscrete semiconductor    diode   
File Size145KB,5 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance  
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BYQ28E-100-HE3/45 Overview

DIODE 5 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB, ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifier Diode

BYQ28E-100-HE3/45 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerVishay
Parts packaging codeTO-220AB
package instructionROHS COMPLIANT, PLASTIC PACKAGE-3
Contacts3
Reach Compliance Codeunknown
BYQ28E(F,B)-100 thru BYQ28E(F,B)-200, UG(F,B)10BCT
Vishay General Semiconductor
Dual Common Cathode Ultrafast Rectifier
TO-220AB
ITO-220AB
FEATURES
• Glass passivated chip junction
• Ultrafast recovery times
• Soft recovery characteristics
• Low switching losses, high efficiency
• High forward surge capability
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
• Solder dip 260 °C, 40 s (for TO-220AB and
ITO-220AB package)
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of
switching power supplies, freewheeling diodes,
dc-to-dc converters and polarity protection application.
MECHANICAL DATA
Case:
TO-220AB, ITO-220AB, TO-263AB
Epoxy meets UL 94V-0 flammability rating
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity:
As marked
Mounting Torque:
10 in-lbs maximum
2
1
BYQ28E & UG10
PIN 1
PIN 3
PIN 2
CASE
3
1
2
3
BYQ28EF & UGF10
PIN 1
PIN 3
PIN 2
TO-263AB
K
2
1
BYQ28EB & UGB10
PIN 1
PIN 2
K
HEATSINK
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
t
rr
V
F
T
J
max.
5Ax2
100 V, 150 V, 200 V
55 A
25 ns
0.895 V
150 °C
MAXIMUM RATINGS
(T
C
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
Maximum average forward rectified current at T
C
= 100 °C
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
Non-repetitive peak reverse current per diode at t
p
= 100 µs
Electrostatic discharge capacitor voltage,
human body model: C = 250 pF, R = 1.5 kΩ
Operating junction and storage temperature range
Isolation voltage (ITO-220AB only)
from terminal to heatsink t = 1 min
Document Number: 88549
Revision: 07-Jan-08
total device
per diode
SYMBOL
V
RRM
V
RWM
V
DC
I
F(AV)
I
FSM
I
RSM
V
C
T
J
, T
STG
V
AC
UG10BCT
BYQ28E-100
100
100
100
UG10CCT
BYQ28E-150
150
150
150
10
5
55
0.2
8
- 40 to + 150
1500
UG10DCT
BYQ28E-200
200
200
200
UNIT
V
V
V
A
A
A
kV
°C
V
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
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