ASI1010 datasheet, PDF - EEWORLD Datasheet

ASI1010: DescriptionRF Power Bipolar Transistor, 1-Element, L Band, Silicon, NPN, 0.250 INCH, HERMETIC SEALED, FM-2; CategoryDiscrete semiconductor The transistor; File Size17KB，1 Pages; ManufacturerAdvanced Semiconductor, Inc.

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ASI1010 Overview

RF Power Bipolar Transistor, 1-Element, L Band, Silicon, NPN, 0.250 INCH, HERMETIC SEALED, FM-2

Parameter Name	Attribute value
Maker	Advanced Semiconductor, Inc.
package instruction	FLANGE MOUNT, O-CRFM-F2
Contacts	2
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum collector current (IC)	1 A
Collector-based maximum capacity	10 pF
Collector-emitter maximum voltage	35 V
Configuration	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	15
highest frequency band	L BAND
JESD-30 code	O-CRFM-F2
Number of components	1
Number of terminals	2
Maximum operating temperature	200 °C
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	ROUND
Package form	FLANGE MOUNT
Polarity/channel type	NPN
Maximum power dissipation(Abs)	29 W
Certification status	Not Qualified
surface mount	NO
Terminal form	FLAT
Terminal location	RADIAL
transistor applications	AMPLIFIER
Transistor component materials	SILICON

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