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FZ1200R33KF2CB5

Description
Insulated Gate Bipolar Transistor, 2000A I(C), 3300V V(BR)CES, N-Channel, MODULE-9
CategoryDiscrete semiconductor    The transistor   
File Size284KB,7 Pages
ManufacturerEUPEC [eupec GmbH]
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FZ1200R33KF2CB5 Overview

Insulated Gate Bipolar Transistor, 2000A I(C), 3300V V(BR)CES, N-Channel, MODULE-9

FZ1200R33KF2CB5 Parametric

Parameter NameAttribute value
MakerEUPEC [eupec GmbH]
package instructionMODULE-9
Reach Compliance Codeunknown
Shell connectionISOLATED
Maximum collector current (IC)2000 A
Collector-emitter maximum voltage3300 V
ConfigurationCOMPLEX
JESD-30 codeR-XUFM-X9
Number of components3
Number of terminals9
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
transistor applicationsPOWER CONTROL
Transistor component materialsSILICON
Nominal off time (toff)2300 ns
Nominal on time (ton)1130 ns

FZ1200R33KF2CB5 Related Products

FZ1200R33KF2CB5
Description Insulated Gate Bipolar Transistor, 2000A I(C), 3300V V(BR)CES, N-Channel, MODULE-9
Maker EUPEC [eupec GmbH]
package instruction MODULE-9
Reach Compliance Code unknown
Shell connection ISOLATED
Maximum collector current (IC) 2000 A
Collector-emitter maximum voltage 3300 V
Configuration COMPLEX
JESD-30 code R-XUFM-X9
Number of components 3
Number of terminals 9
Package body material UNSPECIFIED
Package shape RECTANGULAR
Package form FLANGE MOUNT
Polarity/channel type N-CHANNEL
Certification status Not Qualified
surface mount NO
Terminal form UNSPECIFIED
Terminal location UPPER
transistor applications POWER CONTROL
Transistor component materials SILICON
Nominal off time (toff) 2300 ns
Nominal on time (ton) 1130 ns

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