Insulated Gate Bipolar Transistor, 2000A I(C), 3300V V(BR)CES, N-Channel, MODULE-9
Parameter Name | Attribute value |
Maker | EUPEC [eupec GmbH] |
package instruction | MODULE-9 |
Reach Compliance Code | unknown |
Shell connection | ISOLATED |
Maximum collector current (IC) | 2000 A |
Collector-emitter maximum voltage | 3300 V |
Configuration | COMPLEX |
JESD-30 code | R-XUFM-X9 |
Number of components | 3 |
Number of terminals | 9 |
Package body material | UNSPECIFIED |
Package shape | RECTANGULAR |
Package form | FLANGE MOUNT |
Polarity/channel type | N-CHANNEL |
Certification status | Not Qualified |
surface mount | NO |
Terminal form | UNSPECIFIED |
Terminal location | UPPER |
transistor applications | POWER CONTROL |
Transistor component materials | SILICON |
Nominal off time (toff) | 2300 ns |
Nominal on time (ton) | 1130 ns |
FZ1200R33KF2CB5 | |
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Description | Insulated Gate Bipolar Transistor, 2000A I(C), 3300V V(BR)CES, N-Channel, MODULE-9 |
Maker | EUPEC [eupec GmbH] |
package instruction | MODULE-9 |
Reach Compliance Code | unknown |
Shell connection | ISOLATED |
Maximum collector current (IC) | 2000 A |
Collector-emitter maximum voltage | 3300 V |
Configuration | COMPLEX |
JESD-30 code | R-XUFM-X9 |
Number of components | 3 |
Number of terminals | 9 |
Package body material | UNSPECIFIED |
Package shape | RECTANGULAR |
Package form | FLANGE MOUNT |
Polarity/channel type | N-CHANNEL |
Certification status | Not Qualified |
surface mount | NO |
Terminal form | UNSPECIFIED |
Terminal location | UPPER |
transistor applications | POWER CONTROL |
Transistor component materials | SILICON |
Nominal off time (toff) | 2300 ns |
Nominal on time (ton) | 1130 ns |