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MASMBG2K3.0TR

Description
2000W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-215AA, PLASTIC PACKAGE-2
CategoryDiscrete semiconductor    diode   
File Size306KB,4 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric View All

MASMBG2K3.0TR Overview

2000W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-215AA, PLASTIC PACKAGE-2

MASMBG2K3.0TR Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerMicrosemi
Parts packaging codeDO-215AA
package instructionR-PDSO-G2
Contacts2
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresHIGH RELIABILITY
Minimum breakdown voltage4.3 V
Maximum clamping voltage5.4 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 codeDO-215AA
JESD-30 codeR-PDSO-G2
JESD-609 codee0
Humidity sensitivity level1
Maximum non-repetitive peak reverse power dissipation2000 W
Number of components1
Number of terminals2
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityUNIDIRECTIONAL
Maximum power dissipation1.38 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage3 V
surface mountYES
technologyAVALANCHE
Terminal surfaceTIN LEAD
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
TECHNICAL DATA SHEET
Gort Road Business Park, Ennis, Co. Clare, Ireland.
Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298
Website: http://www.microsemi.com
6 Lake Street, Lawrence, MA 01841
Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803
Surface Mount 2 kW
Transient Voltage Suppressor
- High Reliability controlled devices
- Unidirectional construction
- Available in both J-bend and Gull-wing terminations
- Selections for 3 V to 5 V standoff voltages (V
WM
)
LEVELS
M, MA, MX, MXL
DEVICES
MSMBJ2K3.0 thru MSMBJ2K5.0, e3
MSMBG2K3.0 thru MSMBG2K5.0,e3
FEATURES
High reliability controlled devices with wafer fabrication and assembly lot traceability
100 % surge tested devices
Suppresses transients up to 2 kW @ 8/20 µs
Optional upscreening available by replacing the M prefix with MA, MX or MXL. These prefixes
specify various screening and conformance inspection options based on MIL-PRF-19500.
Refer to
MicroNote 129
for more details on the screening options.
Moisture classification is Level 1 with no dry pack required per IPC/JEDEC J-STD-020B
3σ lot norm screening performed on Standby Current I
D
APPLICATIONS / BENEFITS
Voltage and reverse (leakage) current lowest available
Protects sensitive components such as IC’s, CMOS, Bipolar, BiCMOS, ECL, DTL, T2L, etc.
Protection from switching transients & induced RF
Compliant to IEC61000-4-2 and IEC61000-4-4 for ESD and EFT protection respectively
Secondary lightning protection per IEC61000-4-5 with 42 Ohms source impedance for Class 1
MAXIMUM RATINGS
Peak Pulse Power dissipation at 25 ºC: 2000 W @ 8/20 µs or 300 W @ 10/1000 µs
with impulse repetition rate (duty factor) of 0.01 maximum (also see Figure 1 and 4)
Steady-state power dissipation: 5 Watts @ T
L
≤ 25 °C or 1.38 Watts at T
A
= 25 °C when
mounted on FR4 PC board with recommended footprint
T
clamping
(0 Volts to V
BR
min.): <100 ps
Operating and Storage temperatures: -65°C to +150°C
Forward Voltage @ 25 °C: 3.5 Volts maximum @ 30 Amp peak impulse of 8.3 ms half-sine
wave (unidirectional only)
Solder temperatures: 260 °C for 10 s (maximum)
RF01019 Rev A, November 2010
High Reliability Product Group
Page 1 of 4

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