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BAV74

Description
Surface Mount Small Signal Switching Diode; Configuration: Dual,Common Cathode; VRRM Max (V): 50; IAV Max (A): 0.2; VFM Max (V): 1; @ IF (A): 0.1; IR Max (UA): 0.1; @VR (V): 50; TRR Max (NS): 4; Pin: F8; Package: SOT-23
CategoryDiscrete semiconductor    diode   
File Size207KB,3 Pages
ManufacturerGalaxy Microelectronics
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BAV74 Overview

Surface Mount Small Signal Switching Diode; Configuration: Dual,Common Cathode; VRRM Max (V): 50; IAV Max (A): 0.2; VFM Max (V): 1; @ IF (A): 0.1; IR Max (UA): 0.1; @VR (V): 50; TRR Max (NS): 4; Pin: F8; Package: SOT-23

BAV74 Parametric

Parameter NameAttribute value
MakerGalaxy Microelectronics
Parts packaging codeSOT-23
package instructionR-PDSO-G3
Reach Compliance Codeunknown
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeR-PDSO-G3
Number of components2
Number of terminals3
Maximum operating temperature150 °C
Maximum output current0.1 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Maximum power dissipation0.25 W
Maximum repetitive peak reverse voltage50 V
Maximum reverse recovery time0.004 µs
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Production specification
Dual surface mount switching diode
FEATURES
For high-speed switching appilication.
Common cathode.
BAV74
Pb
Lead-free
APPLICATIONS
Small signal switching.
ORDERING INFORMATION
Type No.
BAV74
Marking
JA
SOT-23
Package Code
SOT-23
MAXIMUM RATING
@ Ta=25℃ unless otherwise specified
Parameter
Diode reverse voltage
Peak Reverse Voltage
Forward Current
Surge forward current, t=1μs
Total Power Dissipation T
s
=35℃
Junction temperature
Storage temperature range
Symbol
V
R
V
RM
I
F
I
FS
P
tot
T
j
T
stg
Limits
50
50
200
4.5
250
150
-65 to +150
Unit
V
V
mA
A
mW
ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified
Parameter
Reverse breakdown voltage
Reverse voltage leakage current
Forward voltage
Diode capacitance
Reverse recovery time
Symbol
V
(BR)R
I
R
V
F
C
D
t
rr
Test
conditions
MIN
50
0.1
100
1
2.0
4
MAX
UNIT
V
μA
V
pF
nS
I
R
= 100μA
V
R
=50V
V
R
=50V T
A
=150℃
I
F
=100mA
V
R
=0V,f=1MHz
I
F
=I
R
=10mA,R
L
=100Ω
C036
Rev.A
www.gmesemi.com
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