IRFP450 datasheet, PDF - EEWORLD Datasheet

IRFP450: DescriptionPower Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET; CategoryDiscrete semiconductor The transistor; File Size76KB，1 Pages; ManufacturerThomson Consumer Electronics

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Suppliers	Part Number	Price	MOQ	In stock
	IRFP450	-	-	View	Buy Now

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Thomson Consumer Electronics
package instruction	,
Reach Compliance Code	unknown
Configuration	Single
Maximum drain current (Abs) (ID)	14 A
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-609 code	e0
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	180 W
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)

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