MRF6S21140HSR3 datasheet, PDF - EEWORLD Datasheet

MRF6S21140HSR3: DescriptionS BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, NI-880S, CASE 465C-02, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size1MB，12 Pages; ManufacturerRochester Electronics; Websitehttps://www.rocelec.com/; Environmental Compliance

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S BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, NI-880S, CASE 465C-02, 3 PIN

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	Rochester Electronics
package instruction	ROHS COMPLIANT, NI-880S, CASE 465C-02, 3 PIN
Contacts	3
Manufacturer packaging code	CASE 465C-02
Reach Compliance Code	unknown
Shell connection	SOURCE
Configuration	SINGLE
Minimum drain-source breakdown voltage	68 V
FET technology	METAL-OXIDE SEMICONDUCTOR
highest frequency band	S BAND
JESD-30 code	R-CDFP-F2
Humidity sensitivity level	NOT SPECIFIED
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR
Package form	FLATPACK
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	N-CHANNEL
Certification status	COMMERCIAL
surface mount	YES
Terminal surface	NOT SPECIFIED
Terminal form	FLAT
Terminal location	DUAL
Maximum time at peak reflow temperature	40
transistor applications	AMPLIFIER
Transistor component materials	SILICON

	MRF6S21140HSR3	MRF6S21140HR3
Description	S BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, NI-880S, CASE 465C-02, 3 PIN	S BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, NI-880, CASE 465B-03, 3 PIN
Is it lead-free?	Lead free	Lead free
Is it Rohs certified?	conform to	conform to
Maker	Rochester Electronics	Rochester Electronics
package instruction	ROHS COMPLIANT, NI-880S, CASE 465C-02, 3 PIN	ROHS COMPLIANT, NI-880, CASE 465B-03, 3 PIN
Contacts	3	3
Manufacturer packaging code	CASE 465C-02	CASE 465B-03
Reach Compliance Code	unknown	unknown
Shell connection	SOURCE	SOURCE
Configuration	SINGLE	SINGLE
Minimum drain-source breakdown voltage	68 V	68 V
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
highest frequency band	S BAND	S BAND
JESD-30 code	R-CDFP-F2	R-CDFM-F3
Humidity sensitivity level	NOT SPECIFIED	NOT APPLICABLE
Number of components	1	1
Number of terminals	2	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR	RECTANGULAR
Package form	FLATPACK	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	260	260
Polarity/channel type	N-CHANNEL	N-CHANNEL
Certification status	COMMERCIAL	COMMERCIAL
surface mount	YES	YES
Terminal surface	NOT SPECIFIED	NOT SPECIFIED
Terminal form	FLAT	FLAT
Terminal location	DUAL	DUAL
Maximum time at peak reflow temperature	40	40
transistor applications	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON

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