Power Bipolar Transistor, 10A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-3P(N)-E, 3 PIN
Parameter Name | Attribute value |
Maker | KEC |
Parts packaging code | TO-3P |
package instruction | FLANGE MOUNT, R-PSFM-T3 |
Contacts | 3 |
Reach Compliance Code | unknown |
ECCN code | EAR99 |
Shell connection | COLLECTOR |
Maximum collector current (IC) | 10 A |
Collector-emitter maximum voltage | 120 V |
Configuration | SINGLE |
Minimum DC current gain (hFE) | 80 |
JESD-30 code | R-PSFM-T3 |
Number of components | 1 |
Number of terminals | 3 |
Package body material | PLASTIC/EPOXY |
Package shape | RECTANGULAR |
Package form | FLANGE MOUNT |
Polarity/channel type | NPN |
Certification status | Not Qualified |
surface mount | NO |
Terminal form | THROUGH-HOLE |
Terminal location | SINGLE |
transistor applications | AMPLIFIER |
Transistor component materials | SILICON |
Nominal transition frequency (fT) | 12 MHz |
KTD718B-O | KTD718B-R | |
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Description | Power Bipolar Transistor, 10A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-3P(N)-E, 3 PIN | Power Bipolar Transistor, 10A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-3P(N)-E, 3 PIN |
Maker | KEC | KEC |
Parts packaging code | TO-3P | TO-3P |
package instruction | FLANGE MOUNT, R-PSFM-T3 | FLANGE MOUNT, R-PSFM-T3 |
Contacts | 3 | 3 |
Reach Compliance Code | unknown | unknown |
ECCN code | EAR99 | EAR99 |
Shell connection | COLLECTOR | COLLECTOR |
Maximum collector current (IC) | 10 A | 10 A |
Collector-emitter maximum voltage | 120 V | 120 V |
Configuration | SINGLE | SINGLE |
Minimum DC current gain (hFE) | 80 | 55 |
JESD-30 code | R-PSFM-T3 | R-PSFM-T3 |
Number of components | 1 | 1 |
Number of terminals | 3 | 3 |
Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY |
Package shape | RECTANGULAR | RECTANGULAR |
Package form | FLANGE MOUNT | FLANGE MOUNT |
Polarity/channel type | NPN | NPN |
Certification status | Not Qualified | Not Qualified |
surface mount | NO | NO |
Terminal form | THROUGH-HOLE | THROUGH-HOLE |
Terminal location | SINGLE | SINGLE |
transistor applications | AMPLIFIER | AMPLIFIER |
Transistor component materials | SILICON | SILICON |
Nominal transition frequency (fT) | 12 MHz | 12 MHz |