EEWORLDEEWORLDEEWORLD

Part Number

Search

C46B

Description
Silicon Controlled Rectifier, 80000mA I(T), 200V V(DRM)
CategoryAnalog mixed-signal IC    Trigger device   
File Size509KB,4 Pages
ManufacturerAdvanced Semiconductor, Inc.
Download Datasheet Parametric View All

C46B Overview

Silicon Controlled Rectifier, 80000mA I(T), 200V V(DRM)

C46B Parametric

Parameter NameAttribute value
MakerAdvanced Semiconductor, Inc.
package instruction,
Reach Compliance Codeunknown
Nominal circuit commutation break time80 µs
Critical rise rate of minimum off-state voltage100 V/us
Maximum DC gate trigger current75 mA
Maximum DC gate trigger voltage3 V
Maximum holding current100 mA
Maximum leakage current4 mA
On-state non-repetitive peak current800 A
Maximum on-state voltage3.1 V
Maximum on-state current80000 A
Maximum operating temperature125 °C
Minimum operating temperature-45 °C
Off-state repetitive peak voltage200 V
surface mountNO
Trigger device typeSCR

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号