Silicon Controlled Rectifier, 80000mA I(T), 1200V V(DRM)
Parameter Name | Attribute value |
Maker | Advanced Semiconductor, Inc. |
package instruction | , |
Reach Compliance Code | unknown |
Nominal circuit commutation break time | 80 µs |
Critical rise rate of minimum off-state voltage | 100 V/us |
Maximum DC gate trigger current | 75 mA |
Maximum DC gate trigger voltage | 3 V |
Maximum holding current | 100 mA |
Maximum leakage current | 4 mA |
On-state non-repetitive peak current | 800 A |
Maximum on-state voltage | 3.1 V |
Maximum on-state current | 80000 A |
Maximum operating temperature | 125 °C |
Minimum operating temperature | -45 °C |
Off-state repetitive peak voltage | 1200 V |
surface mount | NO |
Trigger device type | SCR |