SKM145GB176D_07 datasheet, PDF

SKM145GB176D_07: Description160 A, 1700 V, N-CHANNEL IGBT; Categorysemiconductor Discrete semiconductor; File Size811KB，6 Pages; ManufacturerSEMIKRON; Websitehttp://www.semikron.com

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SKM145GB176D_07 Overview

160 A, 1700 V, N-CHANNEL IGBT

Parameter Name	Attribute value
Number of terminals	7
Rated off time	775 ns
Maximum collector current	160 A
Maximum Collector-Emitter Voltage	1700 V
Processing package description	CASE D 61, SEMITRANS 2, 7 PIN
state	ACTIVE
packaging shape	Rectangle
Package Size	Flange mounting
Terminal form	UNSPECIFIED
terminal coating	NOT SPECIFIED
Terminal location	UPPER
Packaging Materials	UNSPECIFIED
structure	SERIES CONNECTED, CENTER TAPPED WITH BUILT-IN DIODES
Shell connection	isolation
Number of components	2
transistor applications	POWER control
Transistor component materials	silicon
Channel type	N channel
Transistor type	INSULATED GATE BIPOLAR
Rated on time	282 ns

	SKM145GB176D_07	SKM145GAL176D
Description	160 A, 1700 V, N-CHANNEL IGBT	160 A, 1700 V, N-CHANNEL IGBT
Number of terminals	7	7
Rated off time	775 ns	775 ns
Maximum collector current	160 A	160 A
Maximum Collector-Emitter Voltage	1700 V	1700 V
Processing package description	CASE D 61, SEMITRANS 2, 7 PIN	CASE D 61, SEMITRANS 2, 7 PIN
state	ACTIVE	ACTIVE
packaging shape	Rectangle	Rectangle
Package Size	Flange mounting	Flange mounting
Terminal form	UNSPECIFIED	UNSPECIFIED
terminal coating	NOT SPECIFIED	NOT SPECIFIED
Terminal location	UPPER	UPPER
Packaging Materials	UNSPECIFIED	UNSPECIFIED
structure	SERIES CONNECTED, CENTER TAPPED WITH BUILT-IN DIODES	SERIES CONNECTED, CENTER TAPPED WITH BUILT-IN DIODES
Shell connection	isolation	isolation
Number of components	2	2
transistor applications	POWER control	POWER control
Transistor component materials	silicon	silicon
Channel type	N channel	N channel
Transistor type	INSULATED GATE BIPOLAR	INSULATED GATE BIPOLAR
Rated on time	282 ns	282 ns

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