Variable Capacitance Diode, 15pF C(T), 30V, Silicon, Abrupt, DO-7
Parameter Name | Attribute value |
Maker | Cobham PLC |
Reach Compliance Code | unknown |
ECCN code | EAR99 |
Minimum breakdown voltage | 30 V |
Shell connection | ISOLATED |
Configuration | SINGLE |
Diode Capacitance Tolerance | 20% |
Minimum diode capacitance ratio | 2.5 |
Nominal diode capacitance | 15 pF |
Diode component materials | SILICON |
Diode type | VARIABLE CAPACITANCE DIODE |
JEDEC-95 code | DO-7 |
JESD-30 code | O-LALF-W2 |
JESD-609 code | e0 |
Humidity sensitivity level | NOT SPECIFIED |
Number of components | 1 |
Number of terminals | 2 |
Package body material | GLASS |
Package shape | ROUND |
Package form | LONG FORM |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
Maximum power dissipation | 0.4 W |
Certification status | Not Qualified |
minimum quality factor | 400 |
surface mount | NO |
Terminal surface | TIN LEAD |
Terminal form | WIRE |
Terminal location | AXIAL |
Maximum time at peak reflow temperature | NOT SPECIFIED |
Varactor Diode Classification | ABRUPT |
MV2105 | MV2112 | MV2115 | MV2107 | MV2109 | MV2114 | MV2103 | MV2108 | MV2111 | |
---|---|---|---|---|---|---|---|---|---|
Description | Variable Capacitance Diode, 15pF C(T), 30V, Silicon, Abrupt, DO-7 | Variable Capacitance Diode, 56pF C(T), 30V, Silicon, Abrupt, DO-7 | Variable Capacitance Diode, 100pF C(T), 30V, Silicon, Abrupt, DO-7 | Variable Capacitance Diode, 22pF C(T), 30V, Silicon, Abrupt, DO-7 | Variable Capacitance Diode, 33pF C(T), 30V, Silicon, Abrupt, DO-7 | Variable Capacitance Diode, 82pF C(T), 30V, Silicon, Abrupt, DO-7 | Variable Capacitance Diode, 10pF C(T), 30V, Silicon, Abrupt, DO-7 | Variable Capacitance Diode, 27pF C(T), 30V, Silicon, Abrupt, DO-7 | Variable Capacitance Diode, 47pF C(T), 30V, Silicon, Abrupt, DO-7 |
Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknown |
ECCN code | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
Minimum breakdown voltage | 30 V | 30 V | 30 V | 30 V | 30 V | 30 V | 30 V | 30 V | 30 V |
Shell connection | ISOLATED | ISOLATED | ISOLATED | ISOLATED | ISOLATED | ISOLATED | ISOLATED | ISOLATED | ISOLATED |
Configuration | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
Diode Capacitance Tolerance | 20% | 20% | 20% | 20% | 20% | 20% | 20% | 20% | 20% |
Minimum diode capacitance ratio | 2.5 | 2.6 | 2.6 | 2.5 | 2.5 | 2.6 | 2.5 | 2.5 | 2.5 |
Nominal diode capacitance | 15 pF | 56 pF | 100 pF | 22 pF | 33 pF | 82 pF | 10 pF | 27 pF | 47 pF |
Diode component materials | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
Diode type | VARIABLE CAPACITANCE DIODE | VARIABLE CAPACITANCE DIODE | VARIABLE CAPACITANCE DIODE | VARIABLE CAPACITANCE DIODE | VARIABLE CAPACITANCE DIODE | VARIABLE CAPACITANCE DIODE | VARIABLE CAPACITANCE DIODE | VARIABLE CAPACITANCE DIODE | VARIABLE CAPACITANCE DIODE |
JEDEC-95 code | DO-7 | DO-7 | DO-7 | DO-7 | DO-7 | DO-7 | DO-7 | DO-7 | DO-7 |
JESD-30 code | O-LALF-W2 | O-LALF-W2 | O-LALF-W2 | O-LALF-W2 | O-LALF-W2 | O-LALF-W2 | O-LALF-W2 | O-LALF-W2 | O-LALF-W2 |
JESD-609 code | e0 | e0 | e0 | e0 | e0 | e0 | e0 | e0 | e0 |
Number of components | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
Number of terminals | 2 | 2 | 2 | 2 | 2 | 2 | 2 | 2 | 2 |
Package body material | GLASS | GLASS | GLASS | GLASS | GLASS | GLASS | GLASS | GLASS | GLASS |
Package shape | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND |
Package form | LONG FORM | LONG FORM | LONG FORM | LONG FORM | LONG FORM | LONG FORM | LONG FORM | LONG FORM | LONG FORM |
Maximum power dissipation | 0.4 W | 0.4 W | 0.4 W | 0.4 W | 0.4 W | 0.4 W | 0.4 W | 0.4 W | 0.4 W |
Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
minimum quality factor | 400 | 150 | 100 | 350 | 200 | 100 | 400 | 300 | 150 |
surface mount | NO | NO | NO | NO | NO | NO | NO | NO | NO |
Terminal surface | TIN LEAD | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | TIN LEAD | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | TIN LEAD | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
Terminal form | WIRE | WIRE | WIRE | WIRE | WIRE | WIRE | WIRE | WIRE | WIRE |
Terminal location | AXIAL | AXIAL | AXIAL | AXIAL | AXIAL | AXIAL | AXIAL | AXIAL | AXIAL |
Varactor Diode Classification | ABRUPT | ABRUPT | ABRUPT | ABRUPT | ABRUPT | ABRUPT | ABRUPT | ABRUPT | ABRUPT |
Maker | Cobham PLC | Cobham PLC | - | Cobham PLC | Cobham PLC | Cobham PLC | Cobham PLC | Cobham PLC | Cobham PLC |
Is it Rohs certified? | - | incompatible | incompatible | - | incompatible | incompatible | - | incompatible | incompatible |
package instruction | - | O-LALF-W2 | O-LALF-W2 | - | O-LALF-W2 | O-LALF-W2 | - | O-LALF-W2 | O-LALF-W2 |
Maximum operating temperature | - | 175 °C | 175 °C | - | 175 °C | 175 °C | - | 175 °C | 175 °C |
Minimum operating temperature | - | -65 °C | -65 °C | - | -65 °C | -65 °C | - | -65 °C | -65 °C |
Maximum repetitive peak reverse voltage | - | 30 V | 30 V | - | 30 V | 30 V | - | 30 V | 30 V |
Maximum reverse current | - | 0.02 µA | 2e-8 µA | - | 2e-8 µA | 0.02 µA | - | 2e-8 µA | 2e-8 µA |
Reverse test voltage | - | 25 V | 25 V | - | 25 V | 25 V | - | 25 V | 25 V |