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BC808-25-TP-HF

Description
Small Signal Bipolar Transistor,
CategoryDiscrete semiconductor    The transistor   
File Size267KB,3 Pages
ManufacturerMicro Commercial Components (MCC)
Environmental Compliance
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BC808-25-TP-HF Overview

Small Signal Bipolar Transistor,

BC808-25-TP-HF Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerMicro Commercial Components (MCC)
package instruction,
Reach Compliance Codecompliant
ECCN codeEAR99
Humidity sensitivity level1
Peak Reflow Temperature (Celsius)260
Maximum time at peak reflow temperature10
Base Number Matches1
MCC
TM
Micro Commercial Components
  omponents
20736 Marilla
Street Chatsworth

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$ %    !"#
BC808-16
BC808-25
BC808-40
PNP Silicon
General Purpose
Transistors
SOT-23
A
D
Features
Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
Capable of 0.3Watts of Power Dissipation.
Collector-current 0.8A
Operating and storage junction temperature range: -65
O
C to +150
O
C
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
Halogen
free available upon request by adding suffix "-HF"
Case: SOT-23 Molded Plastic
Terminals: Solderable per MIL-STD-202, Method 208
Weight: 0.008 grams (approx.)
Device Marking:
BC808-16
5E
BC808-25
5F
BC808-40
5G
Mechanical Data
3
C
C
B
Electrical Characteristics @ 25
O
C Unless Otherwise Specified
Symbol
Parameter
Collector-Emitter Breakdown Voltage
(I
C
=-10mAdc, I
B
=0)
Collector-Base Breakdown Voltage
(I
C
=-100uAdc, I
E
=0)
Collector-Emitter Breakdown Voltage
(I
E
=-100uAdc, I
C
=0)
Collector Cutoff Current
(V
CB
=-25Vdc,I
E
=0)
Emitter Cutoff Current
(V
EB
=-4.0Vdc, I
C
=0)
Min
-25
-30
-5.0
---
---
Max
---
---
---
-0.1
-0.1
Units
Vdc
G
B
F
E
E
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
H
J
Vdc
K
Vdc
uAdc
uAdc
DIM
A
B
C
D
E
F
G
H
J
K
INCHES
MIN
.110
.083
.047
.035
.070
.018
.0005
.035
.003
.015
DIMENSIONS
MM
MAX
.120
.104
.055
.041
.081
.024
.0039
.044
.007
.020
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
.085
.37
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
NOTE
ON CHARACTERISTICS
h
FE(1)
DC Current Gain
(I
C
=-100mAdc, V
CE
=-1.0Vdc)
BC808-16
BC808-25
BC808-40
DC Current Gain
(I
C
=-300mAdc, V
CE
=-1.0Vdc)
Collector-Emitter Saturation Voltage
(I
C
=-500mAdc, I
B
=-50mAdc)
Base-Emitter Voltage
(V
CE
=-1Vdc,I
C
=-300mAdc)
Transition frequency
(V
CE
=-5.0V, f=50MHz, I
C
=-10mA)
Collector output capacitance
(V
CE
=-5.0V, f=50MHz, I
C
=-10mA)
h
FE(2)
V
CE(sat)
V
BE
100
160
250
60
---
---
250
400
630
---
-0.7
-1.2
---
---
---
---
Vdc
Vdc
.035
.900
Suggested Solder
Pad Layout
.031
.800
.079
2.000
inches
mm
SMALL SIGNAL CHARACTERISTICS
f
T
C
ob
100
12
---
---
MHz
pF
.037
.950
.037
.950
www.mccsemi.com
Revision:
B
1 of 3
2013/01/01

BC808-25-TP-HF Related Products

BC808-25-TP-HF BC808-40-TP BC808-16-TP BC808-16-TP-HF BC808-40-TP-HF
Description Small Signal Bipolar Transistor, Small Signal Bipolar Transistor, 0.8A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3 Small Signal Bipolar Transistor, 0.8A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3 Small Signal Bipolar Transistor, Small Signal Bipolar Transistor,
Is it Rohs certified? conform to conform to conform to conform to conform to
Reach Compliance Code compliant compliant compliant compliant compliant
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99
Peak Reflow Temperature (Celsius) 260 260 260 260 260
Maximum time at peak reflow temperature 10 10 10 10 10
Base Number Matches 1 1 1 1 1
Humidity sensitivity level 1 - - 1 1

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