Standard SRAM, 256X4, 35ns, NMOS, CDIP22, CERAMIC, DIP-22
| Parameter Name | Attribute value |
| Is it lead-free? | Contains lead |
| Is it Rohs certified? | incompatible |
| Maker | AMD |
| Parts packaging code | DIP |
| package instruction | DIP, DIP22,.4 |
| Contacts | 22 |
| Reach Compliance Code | unknown |
| ECCN code | 3A001.A.2.C |
| Maximum access time | 35 ns |
| I/O type | SEPARATE |
| JESD-30 code | R-GDIP-T22 |
| JESD-609 code | e0 |
| length | 27.4955 mm |
| memory density | 1024 bit |
| Memory IC Type | STANDARD SRAM |
| memory width | 4 |
| Number of functions | 1 |
| Number of ports | 1 |
| Number of terminals | 22 |
| word count | 256 words |
| character code | 256 |
| Operating mode | ASYNCHRONOUS |
| Maximum operating temperature | 125 °C |
| Minimum operating temperature | -55 °C |
| organize | 256X4 |
| Output characteristics | 3-STATE |
| Exportable | YES |
| Package body material | CERAMIC, GLASS-SEALED |
| encapsulated code | DIP |
| Encapsulate equivalent code | DIP22,.4 |
| Package shape | RECTANGULAR |
| Package form | IN-LINE |
| Parallel/Serial | PARALLEL |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Certification status | Not Qualified |
| Filter level | MIL-STD-883 Class B (Modified) |
| Maximum seat height | 5.08 mm |
| Maximum slew rate | 0.135 mA |
| Maximum supply voltage (Vsup) | 5.5 V |
| Minimum supply voltage (Vsup) | 4.5 V |
| Nominal supply voltage (Vsup) | 5 V |
| surface mount | NO |
| technology | NMOS |
| Temperature level | MILITARY |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | THROUGH-HOLE |
| Terminal pitch | 2.54 mm |
| Terminal location | DUAL |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| width | 7.62 mm |
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