MSA-2643
Cascadable Silicon Bipolar
Gain Block MMIC Amplifier
Data Sheet
Description
Avago Technologies’ MSA-2643 is a low current silicon
gain block MMIC amplifier housed in a 4-lead SC-70
(SOT-343) surface mount plastic package.
Providing a nominal 15.9 dB gain at up to 9.4 dBm Pout,
this device is ideal for small-signal gain stages or IF
amplification.
The Darlington feedback structure provides inherent
broad bandwidth performance. The 25 GHz f
t
fabrica-
tion process results in a device with low current draw
and useful operation to past 3 GHz.
Surface Mount Package, SOT-343/4-lead SC70
Features
• Small signal gain amplifier
• Low current draw
• Wide bandwidth
• 50 Ohms input & output
• Low cost surface mount small plastic package
SOT-343 (4 lead SC-70)
• Tape-and-reel packaging option available
Specifications
2 GHz; 5V, 27 mA (typ.)
• 15.9 dB associated gain
• 9.4 dBm P1dB
• 3.6 dB noise figure
• 21.9 dBm output IP3
• Useful gain past 3 GHz
Pin Connections and Package Marking
Applications
• Cellular/PCS/WLL basestations
• Wireless data/ WLAN
RFin
GROUND
26x
RF OUT/BIAS
GROUND
• Fiber-optic systems
• ISM
• General purpose gain block amplifier
Note:
Top View. Package marking provides orientation and identification.
‘x’ is a character to identify date code.
Typical Biasing Configuration
V
CC
=
5
V
R
c
C
bypass
C
block
IN
MSA
RFC
C
block
OUT
V
d
= 3.4 V
MSA-2643 Absolute Maximum Ratings
[1]
Symbol
Parameter
I
d
P
diss
P
in max.
T
Jmax
T
STG
θ
jc
Device Current
Total Power Dissipation
[]
RF Input Power
Junction Temperature
Storage Temperature
Thermal Resistance
[3]
Units
mA
mW
dBm
°C
°C
°C/W
Absolute Maximum
70
30
18
150
-65 to 150
18
Notes:
1. Operation of this device above any one of
these parameters may cause permanent
damage.
. Ground lead temperature is 5°C. Derate
7.4 mW/°C for T
L
> 119°C.
3. Thermal resistance measured using 150°C
Liquid Crystal Measurement method.
Electrical Specifications
T
A
= +5°C, I
d
= 7 mA, Z
O
= 50Ω, RF parameters measured in a test circuit for a typical device
Symbol
Parameter and Test Condition
Frequency
Units
Min.
Typ.
[1]
V
d
G
P
∆G
P
F
3dB
VSWR
in
VSWR
out
NF
P
1dB
OIP
3
DV/dT
Device Voltage, I
d
=7 mA
Power Gain (|S1|
)
Gain Flatness
3 dB Bandwidth
Input Voltage Standing Wave Ratio
Output Voltage Standing Wave Ratio
50Ω Noise Figure
Output Power at 1 dB Gain Compression
Output Third Order Intercept Point
Device Voltage Temperature Coefficient
900 MHz
GHz
0.1 to GHz
0.1 to 6 GHz
0.1 to 6 GHz
900 MHz
GHz
900 MHz
GHz
900 MHz
GHz
V
dB
dB
GHz
dB
dBm
dBm
mV/°C
3.0
14.5
3.4
16.9
15.9
±0.56
4.
1.8:1
1.5 :1
3.5
3.6
10.6
9.4
4.8
1.9
-4.4
Max.
3.8
17.5
σ
0.03
0.
0.
0.15
0.11
0.07
0.07
0.09
0.17
Notes:
1. Typical value determined from a sample size of 500 parts from 6 wafers.
. Standard deviation is based on 500 samples taken from 6 different wafers. Future wafers allocated to this product may have typical values any-
where between the minimum and maximum specification limits.
Input
50 Ohm
Transmission Line
(0.5 dB loss)
DUT
50 Ohm
Transmission Line
Including Bias T
(1.05 dB loss)
Output
Block diagram of 2 GHz production test board used for gain measurements. Circuit losses have been de-embedded from actual measurements.
MSA-2643 Typical Performance
70
60
50
-40°C
+25°C
+85°C
18
17
16
5
4
3
2
1
0
-40°C
+25°C
+85°C
GAIN (dB)
40
30
20
10
2.0
15
14
13
12
-40°C
+25°C
+85°C
2.5
3.0
V
d
(V)
3.5
4.0
4.5
0
10
20
30
40
50
60
70
NF (dB)
I
d
(mA)
0
10
20
30
40
50
60
70
I
d
(mA)
I
d
(mA)
Figure 1. I
d
vs. V
d
and Temperature.
Figure 2. Gain vs. I
d
and Temperature at
2 GHz.
30
25
Figure 3. NF vs. I
d
and Temperature at 2 GHz.
20
15
10
5
0
-5
-10
-40°C
+25°C
+85°C
20
15
P1dB (dBm)
OIP3 (dBm)
20
GAIN (dB)
-40°C
+25°C
+85°C
15
10
5
0
10
5
0
10
20
30
40
50
60
70
0
20
40
I
d
(mA)
60
80
0
0
2000
4000
6000
8000
10000
I
d
(mA)
FREQUENCY (MHz)
Figure 4. P1dB vs. I
d
and Temperature at
2 GHz.
8
Figure 5. OIP3 vs. I
d
and Temperature at 2 GHz.
Figure 6. Gain vs. Frequency at I
d
= 27 mA.
15
10
30
6
P1dB (dBm)
NF (dB)
5
0
-5
-10
4
OIP3 (dBm)
0
2000
4000
6000
8000
10000 12000
20
10
2
0
0
2000
4000
6000
8000
10000 12000
0
0
2000
4000
6000
8000
10000
FREQUENCY (MHz)
FREQUENCY (MHz)
FREQUENCY (MHz)
Figure 7. Noise Figure vs. Frequency at
I
d
= 27 mA.
Figure 8. P1dB vs. Frequency at I
d
= 27 mA.
Figure 9. OIP3 vs. Frequency at I
d
= 27 mA.
3
MSA-2643 Typical Performance,
continued
35
30
25
100
900
1900
2400
20
8
10000
15
OIP3 (dBm)
10
NF (dB)
20
15
10
5
0
0
20
40
I
d
(mA)
60
5800
7000
8000
9000
10000
GAIN (dB)
100
900
1900
2400
5800
7000
8000
9000
10000
6
9000
8000
7000
5800
2400
1900
900
100
4
5
2
80
0
0
20
I
d
(mA)
40
60
0
0
10
20
30
40
50
60
70
I
d
(mA)
Figure 10. OIP3 vs. I
d
and Frequency (MHz).
Figure 11. Gain vs. I
d
and Frequency (MHz).
Figure 12. NF vs. I
d
and Frequency (MHz).
20
15
10
5
0
-5
-10
100
900
1900
2400
0
-5
-10
-15
-20
-25
27 mA
45 mA
60 mA
0
-5
-10
-15
-20
-25
27 mA
45 mA
60 mA
P1dB (dBm)
5800
7000
8000
9000
10000
0
20
40
I
d
(mA)
60
80
0
2
4
6
8
10
ORL (dB)
IRL (dB)
0
2
4
6
8
10
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 13. P1dB vs. I
d
and Frequency (MHz).
Figure 14. Input Return Loss vs. Frequency
and I
d
.
Figure 15. Output Return Loss vs. Frequency
and I
d
.
4
MSA-2643 Typical Scattering Parameters
T
A
= 5°C, I
d
= 7 mA
Freq
s
11
s
11
s
21
s
21
(GHz)
Mag
Ang
(dB)
(Mag)
0.1
0.5
1.0
1.5
.0
.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
9.5
10.0
0.13
0.14
0.18
0.
0.5
0.7
0.8
0.8
0.7
0.6
0.5
0.4
0.4
0.3
0.3
0.3
0.3
0.6
0.30
0.37
0.44
0
8
-1
-1
-5
-38
-50
-63
-77
-93
-111
-131
-155
-175
-198
-
-46
-69
71
54
39
17.0
17.0
16.8
16.4
15.9
15.5
15.0
14.6
14.
13.7
13.3
1.8
1.
11.7
11.
10.6
10.0
9.4
8.7
8.1
7.3
7.1
7.1
7.04
6.79
6.49
6.18
5.88
5.59
5.31
5.06
4.79
4.5
4.4
4.01
3.77
3.53
3.8
3.06
.84
.64
.4
s
21
(Ang)
177
163
146
130
114
99
85
71
57
43
9
16
3
-10
-
-35
-48
-60
-7
-84
-97
s
12
(dB)
-0.7
-0.8
-1.1
-1.4
-1.5
-1.6
-1.6
-1.5
-1.3
-1.1
-0.8
-0.6
-0.3
-19.8
-19.3
-18.8
-18.5
-18.0
-17.1
-16.3
-15.6
s
12
(Mag)
0.093
0.09
0.088
0.085
0.084
0.083
0.084
0.084
0.086
0.088
0.091
0.093
0.097
0.10
0.108
0.115
0.119
0.17
0.139
0.153
0.165
s
12
(Ang)
-1
-4
-7
-8
-8
-8
-9
-9
-10
-11
-13
-14
-15
-17
-0
-3
-7
-9
-3
-38
-45
s
22
(Mag)
0.15
0.17
0.19
0.1
0.1
0.1
0.19
0.17
0.15
0.14
0.14
0.15
0.17
0.19
0.1
0.
0.3
0.5
0.9
0.35
0.43
s
22
(Ang)
-4
-5
-49
-67
-81
67
55
41
4
05
187
174
164
158
150
141
18
117
106
97
88
K
1.1
1.1
1.1
1.1
1.1
1.
1.
1.
1.
1.
1.3
1.3
1.3
1.3
1.3
1.3
1.3
1.3
1.
1.1
1.0
Notes:
1. S-parameters are measured on a microstrip line made on 0.05 inch thick alumina carrier. The input reference plane is at the end of the input lead.
The output reference plane is at the end of the output lead. The parameters include the effect of four plated through via holes connecting ground
landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.00 inch diameter via holes are placed
within 0.010 inch from each ground lead contact point, one via on each side of that point.
5
京公网安备 11010802033920号
EEWORLD
