|
LF357JB |
LF356J |
LF356BJ |
Description |
OP-AMP, 5000uV OFFSET-MAX, 20MHz BAND WIDTH, CDIP8, CERAMIC, DIP-8 |
OP-AMP, 10000uV OFFSET-MAX, 5MHz BAND WIDTH, CDIP8, CERAMIC, DIP-8 |
OP-AMP, 5000uV OFFSET-MAX, 5MHz BAND WIDTH, CDIP8, CERAMIC, DIP-8 |
Parts packaging code |
DIP |
DIP |
DIP |
package instruction |
DIP, |
DIP, DIP8,.3 |
DIP, DIP8,.3 |
Contacts |
8 |
8 |
8 |
Reach Compliance Code |
unknown |
unknown |
unknown |
ECCN code |
EAR99 |
EAR99 |
EAR99 |
Amplifier type |
OPERATIONAL AMPLIFIER |
OPERATIONAL AMPLIFIER |
OPERATIONAL AMPLIFIER |
Maximum average bias current (IIB) |
0.0001 µA |
0.0002 µA |
0.0001 µA |
Minimum Common Mode Rejection Ratio |
85 dB |
80 dB |
85 dB |
Nominal Common Mode Rejection Ratio |
100 dB |
100 dB |
100 dB |
Maximum input offset voltage |
5000 µV |
10000 µV |
5000 µV |
JESD-30 code |
R-GDIP-T8 |
R-GDIP-T8 |
R-GDIP-T8 |
Negative supply voltage upper limit |
-22 V |
-18 V |
-22 V |
Nominal Negative Supply Voltage (Vsup) |
-15 V |
-15 V |
-15 V |
Number of functions |
1 |
1 |
1 |
Number of terminals |
8 |
8 |
8 |
Maximum operating temperature |
70 °C |
70 °C |
70 °C |
Package body material |
CERAMIC, GLASS-SEALED |
CERAMIC, GLASS-SEALED |
CERAMIC, GLASS-SEALED |
encapsulated code |
DIP |
DIP |
DIP |
Package shape |
RECTANGULAR |
RECTANGULAR |
RECTANGULAR |
Package form |
IN-LINE |
IN-LINE |
IN-LINE |
Certification status |
Not Qualified |
Not Qualified |
Not Qualified |
minimum slew rate |
30 V/us |
7.5 V/us |
7.5 V/us |
Nominal slew rate |
50 V/us |
12 V/us |
12 V/us |
Maximum slew rate |
7 mA |
10 mA |
7 mA |
Supply voltage upper limit |
22 V |
18 V |
22 V |
Nominal supply voltage (Vsup) |
15 V |
15 V |
15 V |
surface mount |
NO |
NO |
NO |
Temperature level |
COMMERCIAL |
COMMERCIAL |
COMMERCIAL |
Terminal form |
THROUGH-HOLE |
THROUGH-HOLE |
THROUGH-HOLE |
Terminal location |
DUAL |
DUAL |
DUAL |
Nominal Uniform Gain Bandwidth |
20000 kHz |
5000 kHz |
5000 kHz |
Minimum voltage gain |
50000 |
25000 |
50000 |
Maker |
Motorola ( NXP ) |
- |
Motorola ( NXP ) |
technology |
JFET |
- |
JFET |
Is it Rohs certified? |
- |
incompatible |
incompatible |
Architecture |
- |
VOLTAGE-FEEDBACK |
VOLTAGE-FEEDBACK |
Maximum bias current (IIB) at 25C |
- |
0.0002 µA |
0.0001 µA |
frequency compensation |
- |
YES |
YES |
Maximum input offset current (IIO) |
- |
0.002 µA |
0.001 µA |
JESD-609 code |
- |
e0 |
e0 |
length |
- |
10.415 mm |
10.415 mm |
low-bias |
- |
YES |
YES |
low-dissonance |
- |
NO |
NO |
Encapsulate equivalent code |
- |
DIP8,.3 |
DIP8,.3 |
Peak Reflow Temperature (Celsius) |
- |
NOT SPECIFIED |
NOT SPECIFIED |
power supply |
- |
+-15/+-20 V |
+-15/+-20 V |
Maximum seat height |
- |
5.08 mm |
5.08 mm |
Terminal surface |
- |
Tin/Lead (Sn/Pb) |
Tin/Lead (Sn/Pb) |
Terminal pitch |
- |
2.54 mm |
2.54 mm |
Maximum time at peak reflow temperature |
- |
NOT SPECIFIED |
NOT SPECIFIED |
width |
- |
7.62 mm |
7.62 mm |