SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE TRANSISTOR
*
Complement to MMBT2222/ALT1
*
Collector Dissipation: Pc(max)=225mW
Shandong Yiguang Electronic Joint stock Co., Ltd
MMBT2907/ALT1
PNP EPITAXIAL SILICON TRANSISTO
R
Package:
SOT-23
ABSOLUTE MAXIMUM RATINGS at Ta=25℃
Characteristic
Symbol
Rating
2907
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation Ta=25℃*
Junction Temperature
Storage Temperature
Vcbo
Vceo
Vebo
Ic
P
D
Tj
Tstg
-40
-5
-600
225
150
-55-150
2907A
-60
-60
V
V
V
mA
mW
℃
℃
PIN:
STYLE
NO.1
B
E
C
1
2
3
Unit
ELECTRICAL CHARACTERISTICS at Ta=25℃
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage MMBT2907
MMBT2907A
Emitter-Base Breakdown Voltage
Emitter Cutoff Current
Symbol
BVcbo
BVceo
BVebo
Icex
Min
-60
-40
-60
-5
-50
Max
Unit
V
V
V
nA
Test Conditions
Ic=-10uA
Ie=0
Ic= -10mA Ib=0
Ie= -10uA
Vce=-30V
VBE(OFF) = –0.5Vdc
Ic=0
Collect Cutoff Current
MMBT2907
MMBT2907A
Icbo
Icbo
-20
-10
-20
-10
nA
Vcb= -50V
Vcb= -50V
Ie=0
Ie=0
Collect Cutoff Current
MMBT2907
MMBT2907A
uA
Vcb=-50VIe=0 Ta=125
℃
Vcb=-50VIe=0 Ta=125
℃
Vce=-10VIc= -0.1mA
DC Current Gain
MMBT2907
MMBT2907A
Hfe1
35
75
DC Current Gain
MMBT2907
MMBT2907A
Hfe2
50
100
Vce= -10V Ic= -1mA
DC Current Gain
MMBT2907
MMBT2907A
Hfe3
75
100
Vce=-10V Ic= -10mA
DC Current Gain
DC Current Gain
MMBT2907A
MMBT2907
MMBT2907A
Hfe4
Hfe5
100
30
50
300
Vce=-10V Ic= -150mA
Vce=-10V Ic= -500mA
SEMICONDUCTOR
Shandong Yiguang Electronic Joint stock Co., Ltd
MMBT2907/ALT1
PNP EPITAXIAL SILICON TRANSISTO
R
TECHNICAL DATA
ELECTRICAL CHARACTERISTICS at Ta=25℃(continued)
Characteristic
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Iutput Base Capacitance
Output Base Capacitance
Current Gain-Bandwidth Product
Symbol
Vce(sat)
Vce(sat)
Vbe(sat)
Vbe(sat)
Cibo
Cobo
f
T
200
Min
Max
-0.4
-1.6
-1.3
-2.6
30
8
Unit
V
V
V
V
PF
PF
MHz
Test Conditions
Ic= -150mA Ib= -15mA
Ic= -500mA Ib= -50mA
Ic= -150mA Ib= -15mA
Ic= -500mA Ib= -50mA
V EB = -2.0Vdc,
I C = 0, f = 1.0 MHz
Vcb=-10V Ie=0 f=1MHz
Vce= -20V Ic= -50mA
f=100MHz
SWITCHING CHARACTERISTICS
Characteristic
Delay Time
Rise Time
Turn–On Time
Storage Time
Fall Time
Turn–Off Time
Symbol
t
d
t
r
t on
t
s
t
f
t off
Min
Max
10
40
45
80
30
100
Unit
ns
ns
ns
ns
ns
ns
V CC = -6 Vdc, I C = -150 mAdc
I B1 = I B2 = 15 mAdc
Test Conditions
VCC = -30 Vdc,
I C = -150 mAdc, I B1 = -15 mAdc
*
#
Total Device Dissipation : FR=1
X
0.75
X
0.062in Board,Derate 25℃.
Pulse Test : Pulse Width
≤300uS,Duty
cycle≤2%
DEVICE MARKING:
MMBT2907LT1=M2B
MMBT2907ALT1=2F
SEMICONDUCTOR
Shandong Yiguang Electronic Joint stock Co., Ltd
MMBT2907/ALT1
PNP EPITAXIAL SILICON TRANSISTO
R
TECHNICAL DATA
ＭＭＭＢＴ２９０７／ＡＬＴ１
TYPICAL CHARACTERISTICS
3.0
h
FE
, NORMALIZED CURRENT GAIN
2.0
V
CE
= –1.0 V
V
CE
= –10 V
T
J
= 125°C
25°C
1.0
0.7
0.5
–55°C
0.3
0.2
–0.1
–0.2
–0.3
–0.5 –0.7 –1.0
–2.0
–3.0
–5.0 –7.0
–10
–20
–30
–50
–70 –100
–200
–300
–500
I
C
, COLLECTOR CURREN (mA)
Figure 3. DC Current Gain
–1.0
V
CE
, COLLECTOR– EMITTER
VOLTAGE (VOLTS)
–0.8
I
C
= –1.0 mA
–0.6
–10 mA
–100 mA
–500 mA
–0.4
–0.2
0
–0.005–0.01
–0.02 –0.03 –0.05 –0.7 –0.1
–0.2 –0.3
–0.5 –0.7 –1.0
–2.0 –3.0
–5.0 –7.0 –10
–20
–30
–50
I
B
, BASE CURRENT (mA)
Figure 4. Collector Saturation Region
300
200
100
300
V
CC
= –30 V
t
r
I
C
/I
B
= 10
T
J
= 25°C
200
100
V
CC
= –30 V
I
C
/I
B
= 10
t
f
I
B1
= I
B2
T
J
= 25°C
t, TIME (ns)
t, TIME (ns)
70
50
30
20
70
50
30
20
10
7.0
t ’
s
= t
s
– 1/8 t
f
t
d
@ V
BE(off)
= 0 V
10
7.0
5.0
3.0
2.0 V
5.0
3.0
–5.0–7.0 –10
–20 –30
–50 –70 –100
–200 –300 –500
–5.0–7.0 –10
–20 –30
–50 –70 –100
–200 –300 –500
I
C
, COLLECTOR CURRENT
I
C
, COLLECTOR CURRENT (mA)
Figure 5. Turn–On Time
Figure 6. Turn–Off Time
SEMICONDUCTOR
Shandong Yiguang Electronic Joint stock Co., Ltd
MMBT2907/ALT1
PNP EPITAXIAL SILICON TRANSISTO
R
TECHNICAL DATA
ＭＭＭＢＴ２９０７／ＡＬＴ１
TYPICAL SMALL–SIGNAL CHARACTERISTICS
NOISE FIGURE
V
CE
= 10 Vdc, T
A
= 25°C
10
10
f=1.0 kHz
8.0
8.0
NF, NOISE FIGURE (dB)
6.0
I
C
= –1.0 mA, R
S
= 430
Ω
–500
µA,
R
S
= 560
Ω
–50
µA,
R
S
= 2.7 k
Ω
–100
µA,
R
S
= 1.6 k
Ω
NF, NOISE FIGURE (dB)
6.0
4.0
4.0
I
C
= –50µA
–100
µA
–500
µA
–1.0 mA
2.0
R
S
=OPTIMUM SOURCE RESISTANCE
2.0
0
0.01 0.02
0.05 0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
0
50
100
200
500
1.0 k
2.0 k
5.0 k
10 k
20 k
50 k
f, FREQUENCY (kHz)
R
S
, SOURCE RESISTANCE (
Ω
)
Figure 7. Frequency Effects
f
T
, CURRENT– GAIN — BANDWIDTH
PRODUCT (MHz)
30
20
400
300
200
Figure 8. Source Resistance Effects
C
eb
C, CAPACITANCE(pF)
10
7.0
5.0
100
80
60
V
CE
=–20 V
T
J
= 25°C
C
cb
40
30
20
–1.0
3.0
2.0
–0.1
–0.2 –0.3 –0.5
–1.0
–2.0 –3.0
–5.0
–10
–20 –30
–2.0
–5.0
–10
–20
–50
–100 –200
–500 –1000
REVERSE VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (mA)
Figure 9. Capacitances
–1.0
Figure 10. Current–Gain — Bandwidth Product
+0.5
T
J
= 25°C
–0.8
V
BE(sat)
@ I
C
/I
B
= 10
0
R
θVC
for V
CE(sat)
COEFFICIENT (mV/ ° C)
V, VOLTAGE (VOLTS)
–0.6
V
BE(on)
@ V
CE
= –10 V
–0.5
– 1.0
– 0.4
–1.5
–0.2
–2.0
R
θVB
for V
BE
V
CE(sat)
@ I
C
/I
B
= 10
0
–0.1 –0.2
–0.5 –1.0 –2.0
–5.0 –10
–20
–50 –100 –200
–500
–2.5
–0.1 –0.2
–0.5 –1.0 –2.0
–5.0 –10
–20
–50 –100 –200
–500
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Figure 11. “On” Voltage
Figure 12. Temperature Coefficients
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