Small Signal Bipolar Transistor, 0.8A I(C), 1-Element, PNP, Silicon
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | SIEMENS |
| package instruction | CYLINDRICAL, O-PBCY-T3 |
| Reach Compliance Code | unknown |
| Maximum collector current (IC) | 0.8 A |
| Configuration | SINGLE |
| Minimum DC current gain (hFE) | 100 |
| JESD-30 code | O-PBCY-T3 |
| JESD-609 code | e0 |
| Number of components | 1 |
| Number of terminals | 3 |
| Maximum operating temperature | 150 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | ROUND |
| Package form | CYLINDRICAL |
| Polarity/channel type | PNP |
| Maximum power dissipation(Abs) | 0.625 W |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | THROUGH-HOLE |
| Terminal location | BOTTOM |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 200 MHz |
| VCEsat-Max | 0.6 V |
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